Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs

This paper presents an experimental study on the sensitivity of a Commercial-Off-The-Shelf (COTS) bulk 65-nm SRAM under 15.6 MeV proton irradiation when powered up at ultra-low bias voltage. Tests were run on stand-by and while reading the memory. Results show obvious evidence indicating that decreasing the bias voltage below 1 V exponentially increases the number of observed errors. SBUs and MCUs (mostly with vertical shapes according to the manufacturers' layout) are reported and their behavior is analyzed in this paper. Predictions on the SEU sensitivity obtained with the MUSCA-SEP3 modeling tool are also provided, and compared with the experimental results. These are also compared with 14.2 MeV neutrons, showing a significant difference in the cross-sections for both irradiation sources. TID tests and GEANT4 simulations were also run to check for the reason behind the difference in the cross-section between these two particles.

show abstract

“…As mentioned before, TID can affect SRAM sensitivity to SEUs or even directly cause errors on some devices [32]- [34].…”

Section: A Tid Testmentioning

confidence: 95%

Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD

Rezaei

Martín-Holgado

Morilla

et al. 2020

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…In the case of static random-access memories (SRAMs), the radiation-induced defects and trapped charges, mainly in oxide and dielectric layers and at their interfaces with the semiconductor, alter the electrical conditions within the SRAM cells, affecting transistor threshold voltages and consequently SRAM stability. The degradation of this latter results in a reduction of the static noise margin (SNM) -the minimum noise voltage present at each of the cell storage nodes necessary to flip the state of the cell -and, consequently, in the reduction of the critical charge (Qcrit) -the minimum charge deposited by a ionizing particle at one of the nodes necessary to flip the state of the cell [16][17] -of the SRAM circuit, as shown in some previous studies [8][9][10][11][12][13][14][15]. These synergy effects between TID and single-event effects in devices and circuits are fundamental to apprehend electronic reliability in various environments, like space, accelerators, or future power fusion reactors.…”

Section: Introductionmentioning

confidence: 94%

“…Total ionizing dose (TID) is known to enhance the susceptibility of circuits to single-event effects (SEE) by modifying the electrical characteristics of individual transistors inside the exposed circuit [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. In the case of static random-access memories (SRAMs), the radiation-induced defects and trapped charges, mainly in oxide and dielectric layers and at their interfaces with the semiconductor, alter the electrical conditions within the SRAM cells, affecting transistor threshold voltages and consequently SRAM stability.…”

Section: Introductionmentioning

confidence: 99%

Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs

Moindjie,

Munteanu,

Autran

et al. 2023

Microelectronics Reliability

View full text Add to dashboard Cite

“…Electronics 2022, 11, x FOR PEER REVIEW nanoscale feature device are the buried oxide and shallow trench isolation oxid [27,31,[35][36][37]. For the test chip we designed, the SEU cross-section of the 6T S creases slightly after TID irradiation, due to two main reasons: (1) the gate ox thickness of our test chip is only 1.5 nm, so the gate oxide layer cannot trap eno charges; (2) the transistor used in the test chip adopts the structure of body und FET (BUSFET), which eliminates the formation of parasitic leakage channels bet source and drain electrodes caused by the radiation-induced charges trapped i oxide (BOX).…”

Section: Heavy Ion Irradiationmentioning

confidence: 99%

“…Meanwhile, the SEU cross-section had a certain dependence on parameters such as test data patterns, irradiation test temperature, etc. [27][28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

Zhao

Liu

et al. 2022

Electronics

View full text Add to dashboard Cite

The total ionizing dose (TID) effects on single-event upset (SEU) hardness are investigated for two silicon-on-insulator (SOI) static random access memories (SRAMs) with different layout structures in this paper. The contrary changing trends of TID on SEU sensitivity for 6T and 7T SOI SRAMs are observed in our experiment. After 800 krad(Si) irradiation, the SEU cross-sections of 6T SRAMs increases by 15%, while 7T SRAMs decreases by 60%. Experimental results show that the SEU cross-sections are not only affected by TID irradiation, but also strongly correlate with the layout structure of the memory cells. Theoretical analysis shows that the decrease of SEU cross-section of 7T SRAM is caused by a raised OFF-state equivalent resistance of the delay transistor N5 after TID exposure, which is because the radiation-induced charges are trapped in the shallow trench, and isolation oxide (STI) and buried oxide (BOX) enhance the carrier scattering rate of delay transistor N5.

show abstract

Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs

Cited by 17 publications

References 25 publications

Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD

Evaluation of a COTS 65-nm SRAM Under 15 MeV Protons and 14 MeV Neutrons at Low VDD

Impact of total ionizing dose on the alpha-soft error rate in FDSOI 28 nm SRAMs

The Effects of Total Ionizing Dose on the SEU Cross-Section of SOI SRAMs

Contact Info

Product

Resources

About