Total Room Temperature Wet Cleaning for Si Substrate Surface

Abstract

An ultraclean wafer surface is crucial for high quality processing in Si technologies. Cleaning of the Si wafer surface has been accomplished by RCA wet cleaning for the past quarter century, where there exists high temperature processes consisting of H2504/H202/H20, NH4OH/H202/H20, and HC1/H202/H20 treatment. Thus, RCA cleaning requires a large number of processing steps, resulting in the consumption of a huge volume of liquid chemicals and ultrapure water and simultaneously consuming a large volume of clean air exhaust to suppress chemical vapor from getting into the clean room. Total room temperature wet cleaning consisting of five cleaning steps has been developed for Si wafer surfaces, where consumption volume of liquid chemicals and ultrapure water has been reduced less than 1% and 5%, respectively, compared to that of RCA cleaning. The newly developed cleaning technology has been confirmed to contribute to future simplified and low cost manufacturing of ultralarge scale integrated devices.

FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO2 Surfaces

“…6 The film thickness was measured with a spectroscopic ellipsometer (GES-5M manufactured by SOPRA). Here, the thickness was calculated by assuming a single layer with a constant refractive index, and thus partly includes the influence of an adsorbate layer.…”

“…These are all known to be effective organic contaminant removal methods in semiconductor processing. 6 In particular, Method 1 is also known as the SPM (sulfuric acid-hydrogen peroxide mixture) method. Three Si wafers were oxidized for their use as samples.…”

Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices

“…Each wafer was rinsed with ozonized ultrapure water (5 ppm), cleaned with a 0.25% HF/0.15% H2O2/H2O/surfactant solution under megasonic irradiation, rinsed with ozonized ultrapure water (5 ppm), etched with a 0.1% HF solution, and rinsed with ultrapure water. 4 A thermal SiO2 film as a spacer was formed on n-Si at 1000˚C in wet oxygen gas at 1 atm pressure. The SiO2 film was patterned by photolithography to define the sensing gap region.…”

Влияние Типа Проводимости Кремниевой Подложки На Эффективность Метода Фотостимулированной Адсорбции Полиэлектролитов

“…Пластины кипятили в перекисно-аммиачном растворе и промывали в деионизированной воде. В результате такой обработки на поверхности Si " обновлялся" естественный слой окисла [5], а сама поверхность приобретала отрицательный заряд в воде за счет активации на ней OH-групп. В качестве полиэлектролита, как и в предыдущих наших экспериментах [2][3][4], использовали ПЭИ с молекулярной массой 25 kDa, поскольку он обладает высокими адсорбционными свойствами и часто используется в качестве интерфейсного слоя при создании датчиков [6].…”