Total SiH4/H2 pressure effect on microcrystalline silicon thin films growth and structure

Microcrystalline silicon deposited at high rate on large areas from pure silane with efficient gas utilization

“…Even if the step in deposition rate between 1 and 2 mbar is not well understood, Fig. 5(b) confirms that the so-called ''highpressure depletion'' regime [7,14,28] is interesting in terms of deposition rate and that-for the power inputs usedthe pressure has no major effect on the crystallinity and all mc-Si:H samples have a crystallinity factor between 50% and 60% and even transition samples () contain a crystalline fraction of 46% and 36% for the samples at 0.5 and 1.25 mbar (see Fig. 5(b)), respectively.…”

Investigation of Field‐Effect Passivation Created by Hydrogen Plasma Etching of Radio Corporation of America Formed Chemical Oxides on Crystalline Silicon Wafers

“…Comparing among HPE samples, it is clear that plasma etching condition plays a crucial role in the formation of such field effect, as evidenced by more than one order of magnitude difference in Q f between PE‐1 and PE‐2/3 samples. It seems that higher H particle energy and density, resulting from the longer residence time due to lower H 2 flow rate and longer mean free path due to lower chamber pressure in PE‐1 condition, [ 29 ] favor the band bending formation. Therefore, the origin of the observed field effect has to be related to plasma–wafer interaction.…”

Detailed study of surface and interface properties of μc-Si films

“…In [11,12] the properties of the bottom part of the films were studied combining Raman scattering measurements from both film and substrate sides. This approach needs special substrates and cannot be easily applied to the films deposited on the glass or silica because these materials give strong scattering in roughly the same energy range as a-Si and, therefore, the separation of the contribution of the film to the measured spectra is extremely difficult.…”