Detailed study of surface and interface properties of μc-Si films

Абрамов, А.; Daineka, D.; Djeridane, Y.; Cabarrocas, Pere Roca i

doi:10.1016/j.jnoncrysol.2007.10.099

Cited by 5 publications

(9 citation statements)

References 12 publications

(18 reference statements)

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“…The H 2 /SiF 4 gas ratio was varied from 0.3 to 3.3 (SiF 4 5 3 sccm, while H 2 5 1-11 sccm), while high Ar dilution (Ar 5 80 sccm) was used to increase the SiF 4 gas dissociation. It has been shown in our previous studies 14,15 that Ar improves the dissociation on SiF 4 and SiH 4 plasmas and therefore stimulates the nanocrystals growth, improving the crystalline structure of the films.…”

Section: Introductionmentioning

confidence: 84%

“…In previous works, [12][13][14][15] we studied fluorine-based microcrystalline silicon films (lc-Si:H:F), and demonstrated that lc-Si:H:F can be deposited with a higher crystalline fraction (and larger grains size) than lc-Si:H films produced from SiH 4 -H 2 gas mixtures. Taking advantage of the above, we have studied a process to produce epi-Si films on (100) crystalline silicon (c-Si) substrates, using optimized lc-Si: H:F deposition conditions.…”

Section: Introductionmentioning

confidence: 99%

“…12,14,15,20 An in situ UV-Visible spectroscopic ellipsometer (Jobin Yvon-MWR UVISEL, Palaiseau Cedex, France) was used to measure the imaginary part of the pseudodielectric function [Im(e)] of epiSi films deposited on c-Si at different stages of the process. We used this technique to optimize the plasma cleaning conditions and as well the epi-Si film growth.…”

Section: Introductionmentioning

confidence: 99%

“…The thickness of the layers and their structural composition was determined by modeling the Im(e) spectra using the Bruggemann effective medium approximation (BEMA). 14,15,20,21 To study the chemical composition of the films, with special attention to the epi-Si/c-Si interface, we performed secondary ion mass spectroscopy (SIMS) analysis on the samples. Fourier transform infrared (FTIR) spectroscopic characterization was also performed to study the chemical bonding.…”

Section: Introductionmentioning

confidence: 99%

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Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

2013

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High-quality epitaxial silicon thin films have been deposited by plasma-enhanced chemical vapor deposition (PECVD) at 200°C in a standard radiofrequency (RF) PECVD reactor. We optimized a silicon tetrafluoride (SiF 4 ) plasma to clean the surface of ,100. crystalline silicon wafers and without breaking vacuum, an epitaxial silicon film was grown from SiF 4 , hydrogen (H 2 ), and argon (Ar) gas mixtures. We demonstrate that the H 2 /SiF 4 flow rate ratio is a key parameter to grow high-quality epitaxial silicon films. Moreover, by changing this ratio, we can fine-tune the composition of the interface between the crystalline silicon (c-Si) wafer and the epitaxial film. In this way, at low values of the H 2 /SiF 4 flow rate ratio, an abrupt interface is achieved. On the contrary, by increasing this ratio we can obtain a porous and fragile interface layer, composed of hydrogen-rich microcavities, which allows the transfer of the epitaxial film to foreign substrates.

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Section: Introductionmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

2013

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“…Hydrogenated nanocrystalline silicon (nc-Si:H) material has received considerable attention during the past decade, and has been studied intensively from the points of both applications and fundamental physics [1][2][3]. The motivation for this has been the potential use of this material in many domains especially in the optoelectronic devices and in the solar cells [4,5], since it presents very good optoelectronic properties and high stability versus light induced degradation in comparison with the hydrogenated amorphous silicon (a-Si:H) [6,7].…”

Section: Introductionmentioning

confidence: 99%