All‐solution processed organic Schottky junctions (OSJs) with a near‐infrared absorbing donor material poly(diketopyrrolopyrrole‐terthiophene) (PDPP3T) of 5 wt.% mixed into [6,6]‐phenyl‐C61‐butyric acid methyl ester (PC61BM) were fabricated. Solution‐processed 1,4,5,8,9,11‐hexaazatriphenylenehexacarbonitrile (s‐HAT‐CN) and N‐arylbenzimidazoles (s‐TPBi) served as the hole and electron transporting layer (HTL and ETL), which was usually prepared by thermal‐evaporation. The power conversion efficiency (PCE) was improved from 1.15 to 1.45%, compared with the control device with traditional poly(3,4‐ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) and bathocuproine (BCP) as the HTL and ETL. It could be ascribed to the efficient hole extraction by s‐HAT‐CN and smoother surface, and thus, lower trap density of s‐TPBi. s‐HAT‐CN showed a comparable transparency and higher hole mobility than PEDOT:PSS, and was proved to be an efficient and promising HTL for solution‐processed OSJs. The dependence of OSJ performances on the evaporation‐ and solution‐processed 4,7‐diphenyl‐1,10‐phenanthroline (Bphen) and TPBi was comparably investigated. s‐Bphen and s‐TPBi devices both demonstrated a higher photocurrent relative to the evaporation‐processed Bphen and TPBi devices.