Toward the understanding of annealing effects on (GaIn)2O3 films

Zhang, Fabi; Jan, Hideki; Saito, Katsuhiko; Tanaka, Tooru; Nishio, Mitsuhiro; Nagaoka, Takashi; Arita, Makoto; Guo, Qi

doi:10.1016/j.tsf.2015.02.003

Cited by 15 publications

(14 citation statements)

References 26 publications

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“…Since the test method adopted is grazing incidence, there is no obvious substrate signal caught in the result with a diffraction peak observed. This peak corresponds to Ga 2 O 3 (4̅ 02) with a monoclinic structure, 29,30 indicating that the film has good crystallinity, which is not owned by the two films mentioned later. To observe the thickness and surface morphology of the film, we used SEM and AFM to characterize it.…”

Section: ■ Results and Discussionmentioning

confidence: 94%

Pt/(InGa)₂O₃/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

Wang

Zheng

et al. 2021

ACS Appl. Mater. Interfaces

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Ga 2 O 3 is a popular material for research on solar-blind ultraviolet detectors. However, its absorption cutoff edge is 253 nm, which is not an ideal cutoff edge of 280 nm. In this work, by adjusting the ratio of In/Ga elements in the films, a high-quality (In 0.11 Ga 0.89 ) 2 O 3 film with an absorption cutoff edge of 280 nm was obtained, which owns a uniform surface and preferred orientation. On this basis, a solar-blind ultraviolet photovoltaic detector was constructed based on the Pt/(In 0.11 Ga 0.89 ) 2 O 3 /n-Si heterojunction. When the device is exposed to 254 nm UV light, its open-circuit voltage (V OC ) can reach 354 mV. Under 0 V bias, the device has a responsivity of 0.48 mA/W with a rise time of 0.47 s and a decay time of 0.37 s; under −7 V bias, the device achieves a responsivity of 16.96 mA/W with a rise time of 0.17 s and a decay time of 0.33 s. The spectral response characteristics of the device show that it has a selective response to solar-blind ultraviolet light (cutoff wavelength is 280 nm) with a rejection ratio (R 254 nm /R 310 nm ), which is greater by more than two orders of magnitude. This work provides a good reference for adjusting the band gap of Ga 2 O 3 -based films and broadening their application fields. KEYWORDS: photovoltaic photodetector, solar-blind ultraviolet, (In x Ga 1−x ) 2 O 3 , band gap adjustment, 280 nm

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Section: ■ Results and Discussionmentioning

confidence: 94%

Pt/(InGa)₂O₃/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

Wang

Zheng

et al. 2021

ACS Appl. Mater. Interfaces

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“…Similar thickness reduction has also been observed due to annealing in the case of indium gallium oxide. [ 35 ] The XRD pattern from the as‐grown and annealed samples was identical, indicating that no measurable change in the crystal structure of the film occurred during the vacuum anneal. Figure 10 includes the comparative spectral responsivity measurements from detectors fabricated from both samples.…”

Section: Resultsmentioning

confidence: 99%

High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration

Mukhopadhyay

Hatipoglu

Sakthivel

et al. 2021

Advanced Photonics Research

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A high figure‐of‐merit UV‐C solar‐blind photodetector (PD) fabricated from thin‐film beta‐gallium oxide (β‐Ga2O3) grown on n‐Si substrates by plasma‐assisted molecular beam epitaxy is demonstrated. Film growth sequences for nucleation of Ga2O3 on (100)‐ and (111)‐oriented Si substrates are developed, and the influence of crucial growth parameters is systematically investigated, namely, substrate temperature, oxygen flow rate, and plasma power on the functional properties of the PDs. The PDs show an ultra‐high responsivity of 837 A W−1 and a fast ON/OFF time below 4 ms at −5 V. In addition, they display strong rectifying properties and a sharp cutoff below 280 nm with the average responsivities between 10 and 80 A W−1, a detectivity on the order of 1010 Jones, and rise/fall times between 4 and 500 ms. High photoconductive gain is likely to be due to the mid‐bandgap donor/acceptor defect levels, including oxygen vacancies in the form of self‐trapped holes. It is demonstrated that these defect levels can be modified by controlling the growth conditions, thereby allowing for tailoring of the PD characteristics for specific applications. The methodology represents a cost‐effective solution over homoepitaxial approaches, with characteristics that meet or exceed those reported previously, offering new possibilities for on‐wafer integration with Si opto‐electronics.

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“…From Figure 9 c, it can be seen that O 1s peaks are fitted with two components, as oxygen vacancies often introduce an additional component to the lattice oxygen. 59 The O 1s peaks are characterized as a superposition of two nearby peaks that are located at 529.27 and 531.1 eV and denoted by “O 1 ” and “O 2 ”, respectively. The presence of a dual O 1s peak is very common for oxide materials that contain cations in the multiple valence states.…”

Section: Results and Discussionmentioning

confidence: 99%

“… 60 Therefore, the O 1 peak corresponds to the lattice oxygen, and the O 2 peak can be assigned to the oxygen vacancies. 61 We calculated the percentage of O 1 and O 2 by integrating the intensity of the O 2 peak relative to the total peak intensity and estimated the value to be 36% for O 2 and 64% for O 1 . Hence, a detailed analysis of the XPS data demonstrated the oxidation values of Fe and O to suggest the presence of Fe-based impurities along with abundant oxygen vacancies at room temperature.…”

Section: Results and Discussionmentioning

confidence: 99%

Microwave-Assisted Solvothermal Route for One-Step Synthesis of Pure Phase Bismuth Ferrite Microflowers with Improved Magnetic and Dielectric Properties

et al. 2022

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The prototypical plum-free, one-phase multiferric ferrite BiFeO 3 (BFO) is solid, parallel, with a high ferroelectric Curie temperature and Neel temperature and antiferromagnetic and ferroelectric propagation. This work aims to synthesize pure-phase BFO in the quickest possible way. We followed the microwave-assisted solvothermal (MWAST) method to achieve pure-phase BFO in the shortest duration of 3 min. The experiment involves simple optimizations with KOH concentration and microwave power levels. The surface morphology along with magnetic properties of BFO synthesized via the MWAST method are altered with varying KOH concentrations and microwave (MW) power levels. Our X-ray diffraction findings reveal that the pure-phase BFO is formed at 800 W MW power, and the structural characterizations like transmission electron microscopy, field emission scanning electron microscopy with energy-dispersive X-ray analysis have displayed the formation of uniformly distributed spherical microflowers of pure-phase BFO exhibiting a single-crystalline nature. Besides, the magnetic measurements affirmed a reliable weak ferromagnetic behavior (magnetization ∼1.25 emu/g) in BFO synthesized at 800 W MW power. In addition, good dielectric behavior with low dielectric loss was accompanied by frequency-dependent dielectric studies indicating an excellent frequency response of the material, and also the room-temperature ferroelectric properties were studied using a ferroelectric analyzer. The polarization of pure-phase BFO increases with the applied electric field and exhibits unsaturated polarization–electric field loops due to leakage current. Moreover, the Fourier transform infrared spectrum of the synthesized material has indicated the pure-phase BFO, and the Raman data have elucidated the vibrational modes of BFO. Further, the analysis of X-ray photoelectron spectroscopy data has confirmed the presence of fewer Fe 2+ ions and oxygen vacancies in the pure-phase BFO. Therefore, the collective characterizations and detailed analysis of BFO material have revealed the uniqueness of the MWAST method in producing the pure-phase BFO in 3 min with improved magnetic and dielectric properties, and hence the BFO synthesized via the MWAST method can be a potential candidate for multiferroic applications.

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Toward the understanding of annealing effects on (GaIn)2O3 films

Cited by 15 publications

References 26 publications

Pt/(InGa)₂O₃/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

Pt/(InGa)₂O₃/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration

Microwave-Assisted Solvothermal Route for One-Step Synthesis of Pure Phase Bismuth Ferrite Microflowers with Improved Magnetic and Dielectric Properties

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Toward the understanding of annealing effects on (GaIn)2O3 films

Cited by 15 publications

References 26 publications

Pt/(InGa)2O3/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

Pt/(InGa)2O3/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

High Figure‐of‐Merit Gallium Oxide UV Photodetector on Silicon by Molecular Beam Epitaxy: A Path toward Monolithic Integration

Microwave-Assisted Solvothermal Route for One-Step Synthesis of Pure Phase Bismuth Ferrite Microflowers with Improved Magnetic and Dielectric Properties

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Product

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Pt/(InGa)₂O₃/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

Pt/(InGa)₂O₃/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm