Towards 3D Integration of Monolithic X or Γ Ray Detectors Under Possible Electromagnetic Perturbations or Malfunctions

Gontrand, Christian; Labiod, Samir; Bella, Mourad; Abouelatta, Mohamed; Despeisse, Matthieu; Calmon, Françis; Latreche, Saïda

doi:10.15866/iremos.v8i1.4884

Cited by 2 publications

(2 citation statements)

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“…For the two 3D detector structures: The VFD of the structure is about 1.5 V. The capacitance has its minimum value at voltage V k ≥ 3 V. Hence, the 3D‐detectors can be biased with the same low voltage level of the CMOS readout circuitry (based on the standard 0.35 µm BiCMOS technology which is STMicroelectronics technology like) [11], and can be stacked integrated with the low voltage readout circuit [12].…”

Section: Small Signal Simulation Resultsmentioning

confidence: 99%

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Performance of standard and double‐sided 3D‐radiation detectors under the impact of a temperature pulse

et al. 2015

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In this Letter, a comparison of the electrical performances of a standard and a double-sided 3D-radiation detectors using TCAD simulations is performed. The transient simulation is used to investigate the charge collection performance by swamping the detector with a uniform concentration of EHPs (75 e-h pairs/µm), chosen to give the same total number of carriers as a minimum ionising particle. Both detectors can be biased with the same voltage level of the readout circuitry in the standard 0.35 µm BiCMOS technology, but the standard full 3D structure is preferred for its high collection charge which means high signal to noise ratio. Finally, the impact of a temperature (300−400 K) pulse with fast transition times is studied. The impact has no significant effect on the collection current waveform of the standard but it has a big influence of the current waveform of the doublesided 3D-detectors. This makes the standard 3D-detector favourable than the double-sided 3D-detector in a harsh environment.

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Section: Small Signal Simulation Resultsmentioning

confidence: 99%

“…Hence, the 3D-detectors can be biased with the same low voltage level of the CMOS readout circuitry (based on the standard 0.35 µm BiCMOS technology which is STMicroelectronics technology like) [11], and can be stacked integrated with the low voltage readout circuit [12].…”

Section: Fig 1 C-v Characteristics Of Detector Structuresmentioning

confidence: 99%