Towards accurate atom scale characterisation of hydrogen passivation of interfaces in TOPCon architectures

Shi, Yifu; Jones, Megan E.; Meier, Markus; Wright, Matthew; Polzin, Jana‐Isabelle; Kwapil, Wolfram; Fischer, Christian; Schubert, Martin C.; Grovenor, C.R.M.; Moody, Michael P.

doi:10.1016/j.solmat.2022.111915

Cited by 6 publications

(1 citation statement)

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“…Hydrogen passivation of amorphous and crystalline silicon bulk, films, and surfaces [49][50][51][52][53][54][55][56][57][58] is technologically highly relevant for the fabrication of integrated, sensing, [51] and solar cell devices. [54][55][56] Examples for IR spectroscopic investigations of hydrogen-passivated samples are identification and analysis of the formation of Si-H x groups, [50,53,57] the study of the ideality of the formed passivated interface, [57] the verification of the removal or formation of an interfacial oxide layer, [58] and the analysis of a subsequent functionalization. [52] PMMA is a popular resist in microfabrication processes involving electron beam, photo-, and soft lithography.…”

Section: Introductionmentioning

confidence: 99%

Field Manipulation of Band Properties in Infrared Spectra of Thin Films

Hinrichs,

Shetty,

Kubatkin

et al. 2023

Advanced Photonics Research

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This comprehensive optical study analyzes field manipulations of bands in infrared (IR) spectra of thin films and functional surfaces for varying measurement and sample conditions. Band variations related to the materials dielectric functions, the measurement geometry, the film thickness as well as the direction dependence of the probing electromagnetic fields are demonstrated. Examples are discussed for isotropic polymer films (≈200 nm polymethylmethacrylate [PMMA]) on gold and silicon as well as an anisotropic hydrogen monolayer on a Si(111) surface, characterized by IR–attenuated total reflection, IR microscopy, and incidence‐angle‐dependent IR polarimetry. Even for fixed optical material properties, significant manipulations of band frequency and shape (shifts up to ≈14 cm−1 for PMMA, up to ≈3 cm−1 for H–Si) occur in not only polarization‐dependent but also unpolarized spectra. The shown data underline that polarimetric measurements and optical analyses are essential for a detailed interpretation of band shapes.

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