Towards an industrial in-line solution for efficient post-treatment of silicon heterojunction solar cells

Veirman, Jordi; Caron, Jean-Sébastien; Jeronimo, P.; Gageot, T.; Leoga, Arnaud Joël Kinfack; Ozanne, A.S.; Vecchi, S. De; Soulas, R.; Favre, Wilfried; Ragonesi, A.; Carbone, Lorenzo; Sciuto, Marcello; Voltan, A.

doi:10.1016/j.solmat.2022.111867

Cited by 14 publications

(6 citation statements)

References 12 publications

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“…4 Regarding P-and Ga-doping, the SHJ cells remain stable, with a small increase of Voc, typical of what can be seen in a LS process dedicated to the improvement of cells. 20 For the longest durations of this test (≥200 h), although the data are getting noisier, a downward PCE trend seems to emerge, as seen on Isc for P-and Ga-doping. Further tests with longer illumination time and more cells are required to confirm or not this onset of a long-term degradation.…”

Section: Champion Cellsmentioning

confidence: 76%

“…The best p‐type and n‐type candidates, one of each production day of the n‐type reference and Ga 20 Ω·cm groups, received a double anti reflective coating (DARC) and a light soaking (LS) process developed for n‐type cells 20 . In Figure 7, the LS process is applied several times to the four cells with DARC.…”

Section: Resultsmentioning

confidence: 99%

“…The best p-type and n-type candidates, one of each production day of the n-type reference and Ga 20 ΩÁcm groups, received a double anti reflective coating (DARC) and a light soaking (LS) process developed for n-type cells. 20 In Figure 7, the LS process is applied several times to the four cells with DARC. Despite some cell-to-cell small behavior deviations typical of the DARC and LS, this process yields a significant improvement of Voc and FF with slower kinetics yet with a larger amplitude for the p-type cell on which a 24.03% and a 24.18% for the 2 days of production, respectively, is measured (in-house measurement, total area, and black background IV tester).…”

Section: Champion Cellsmentioning

confidence: 99%

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Closing the gap between n‐ and p‐type silicon heterojunction solar cells: 24.47% efficiency on lightly doped Ga wafers

Danel

Chaugier

Veirman

et al. 2022

Progress in Photovoltaics

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Silicon heterojunction (SHJ) solar cells can be formed using n‐type or p‐type silicon wafers. To foster the increasing industrial interest of SHJ, cheaper p‐type wafers with a good availability might be preferred, but until today, they yield lower cell efficiency compared with n‐type and show instabilities in the particular case of boron doping. This work shows that the production flow of high performance rear‐junction bifacial n‐type cells can be applied to front‐junction p‐type cells without process alterations and with a loss of efficiency as low as −0.3%abs provided that the wafer bulk lifetime is high enough. For this, we propose the use of wafers with gallium doping on which we obtained on a semi‐industrial pilot line SHJ p‐type cells mostly stable under moderated heat and light and with an efficiency closed to n‐type references. The best p‐type cell was externally certified at 24.47% total area.

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Section: Champion Cellsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Section: Champion Cellsmentioning

confidence: 99%

See 1 more Smart Citation

Closing the gap between n‐ and p‐type silicon heterojunction solar cells: 24.47% efficiency on lightly doped Ga wafers

Danel

Chaugier

Veirman

et al. 2022

Progress in Photovoltaics

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“…However, for modules with UV‐cut encapsulant, the FF variation does not follow the same trend, as their I sc values decrease more dramatically and consequently compensate for the increase in the R series values in the FF calculation. The early FF gain can be caused by the light soaking of the SHJ cells involved by the visible and infrared parts of the lamp spectrum 23 . The R series increase could be attributed to the potential TCO photodegradation that would cause the aforementioned early I sc loss.…”

Section: Resultsmentioning

confidence: 99%

“…light soaking of the SHJ cells involved by the visible and infrared parts of the lamp spectrum. 23 The R series increase could be attributed to the potential TCO photodegradation that would cause the aforementioned early I sc loss.…”

Section: Ageing Consequences On Performancementioning

confidence: 99%

Solar cell UV‐induced degradation or module discolouration: Between the devil and the deep yellow sea

Pinochet

Couderc

Thérias

2023

Progress in Photovoltaics

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For decades, photovoltaic (PV) module yellowing caused by UV exposure has been observed on solar arrays in operation. More than an aesthetic inconvenience, this phenomenon can severely impair module performance and promote other degradation mechanisms by undermining the photoprotection provided by encapsulation. To understand how this reaction may affect current encapsulation materials, silicon heterojunction (SHJ) monocell modules with either UV‐cut or UV‐transparent commercial encapsulants were aged under UV irradiation and examined by visual inspection, fluorescence imaging and flash tests. Despite the photoprotection they provide, only the encapsulants that were stabilised by UV absorbers underwent discolouration. On the one hand, UV absorber photodegradation is responsible for the formation of yellow chromophores that affect light transmission to the cell, which could cause net decrease in the photogenerated current high as 4% after 4200 h of accelerated UV ageing. On the other hand, UV‐induced degradation of SHJ solar cells only accounts for a lower photogenerated current loss (3%), in contrast with previous observations in the literature. According to the behaviour of the current encapsulation formulation, the stability of UV absorbing additives has to be improved to ensure the durability of the device over 30 years.

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Investigation of 1-hexanol base silver paste formula for low-temperature sintering

Huang,

Dong,

Chen

et al. 2023

J Mater Sci: Mater Electron

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Towards an industrial in-line solution for efficient post-treatment of silicon heterojunction solar cells

Cited by 14 publications

References 12 publications

Closing the gap between n‐ and p‐type silicon heterojunction solar cells: 24.47% efficiency on lightly doped Ga wafers

Closing the gap between n‐ and p‐type silicon heterojunction solar cells: 24.47% efficiency on lightly doped Ga wafers

Solar cell UV‐induced degradation or module discolouration: Between the devil and the deep yellow sea

Investigation of 1-hexanol base silver paste formula for low-temperature sintering

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