Towards bendable piezoelectric oxide semiconductor field effect transistor based touch sensor

Gupta, Shoubhik; Heidari, Hadi; Lorenzelli, Leandro; Dahiya, Ravinder

doi:10.1109/iscas.2016.7527241

Cited by 6 publications

(6 citation statements)

References 12 publications

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“…This paper reports advances in this direction through our research on bendable piezoelectric oxide semiconductor field effect transistors (POSFET) and the associated interface circuitry. This paper extends our work reported in [20], where we presented the analytical model of POSFET devices using the piezoelectric capacitor model and the underlying physics related to metaloxide-semiconductor Field Effect Transistors (MOSFETs). This extended paper compliments the analytical model of POSFETs with Verilog-A model to describe their behavior under normal force and stressed conditions.…”

Section: Introductionsupporting

confidence: 66%

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Device Modelling for Bendable Piezoelectric FET-Based Touch Sensing System

Gupta

Heidari

Vilouras

et al. 2016

IEEE Trans. Circuits Syst. I

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Device modelling for bendable piezoelectric FET-based touch sensing system.Abstract-Flexible electronics is rapidly evolving towards devices and circuits to enable numerous new applications. The high-performance, in terms of response speed, uniformity and reliability, remains a sticking point. The potential solutions for high-performance related challenges bring us back to the timetested silicon based electronics. However, the changes in the response of silicon based devices due to bending related stresses is a concern, especially because there are no suitable models to predict this behavior. This also makes the circuit design a difficult task. This paper reports advances in this direction, through our research on bendable Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET) based touch sensors. The analytical model of POSFET, complimented with Verilog-A model, is presented to describe the device behavior under normal force in planar and stressed conditions. Further, dynamic readout circuit compensation of POSFET devices have been analyzed and compared with similar arrangement to reduce the piezoresistive effect under tensile and compressive stresses. This approach introduces a first step towards the systematic modeling of stress induced changes in device response. This systematic study will help realize high-performance bendable microsystems with integrated sensors and readout circuitry on ultra-thin chips (UTCs) needed in various applications, in particular, the electronic skin (e-skin).

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Section: Introductionsupporting

confidence: 66%

“…The physico-mechanical model described in the previous subsection could be adapted to fully characterize the POSFET devices [20]. Starting from these physical models we have implemented a general macro-model in Verilog-A.…”

Section: B Verilog-a Modelmentioning

confidence: 99%

Device Modelling for Bendable Piezoelectric FET-Based Touch Sensing System

Gupta

Heidari

Vilouras

et al. 2016

IEEE Trans. Circuits Syst. I

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“…In order to achieve biomimetic tactile sensing, about 250 MRs/ cm 2 are required in the fingertip of prosthetic limb, 121 which could be achieved by high density tactile sensors such as flexible POSFET that can conform to fingertips. 122 Further, UTCs could be useful for large area tactile skin based on planar off-the-shelf electronics integrated on FPCBs. 123 Lack of bendability of electronics has often limited the use of large area skin to body parts with large curvature.…”

Section: Applications Of Utcsmentioning

confidence: 99%

Ultra-thin chips for high-performance flexible electronics

et al. 2018

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Flexible electronics has significantly advanced over the last few years, as devices and circuits from nanoscale structures to printed thin films have started to appear. Simultaneously, the demand for high-performance electronics has also increased because flexible and compact integrated circuits are needed to obtain fully flexible electronic systems. It is challenging to obtain flexible and compact integrated circuits as the silicon based CMOS electronics, which is currently the industry standard for high-performance, is planar and the brittle nature of silicon makes bendability difficult. For this reason, the ultra-thin chips from silicon is gaining interest. This review provides an in-depth analysis of various approaches for obtaining ultra-thin chips from rigid silicon wafer. The comprehensive study presented here includes analysis of ultra-thin chips properties such as the electrical, thermal, optical and mechanical properties, stress modelling, and packaging techniques. The underpinning advances in areas such as sensing, computing, data storage, and energy have been discussed along with several emerging applications (e.g., wearable systems, m-Health, smart cities and Internet of Things etc.) they will enable. This paper is targeted to the readers working in the field of integrated circuits on thin and bendable silicon; but it can be of broad interest to everyone working in the field of flexible electronics.

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“…In this equation there is a series combination of oxide capacitance ( ) and PVDF-TrFE capacitance ( ) represented as . An effective threshold voltage ( ℎ ), is formulated based on polarization charges and transistor's actual threshold voltage arising due to shift of remnant polarization charges ( , ) in piezoelectric material [20].…”

Section: Modelling and Validationmentioning

confidence: 99%

“…The output produced by sensor can be recorded as voltage by passing the current through a resistor [20].…”

Section: Modelling and Validationmentioning

confidence: 99%

Device modelling of silicon based high-performance flexible electronics

Gupta

Vilouras

Heidari

et al. 2017

2017 IEEE 26th International Symposium on Industrial Electronics (ISIE)

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Abstract-The area of flexible electronics is rapidly expanding and evolving. With applications requiring high speed and performance, ultra-thin silicon-based electronics has shown its prominence. However, the change in device response upon bending is a major concern. In absence of suitable analytical and design tool friendly model, the behavior under bent condition is hard to predict. This poses challenges to circuit designer working in the bendable electronics field, in laying out a design that can give a precise response in a stressed condition. This paper presents advances in this direction and investigates the effect of compressive and tensile stress on the performance of NMOS and PMOS transistor and a touch sensor comprising a transistor and piezoelectric capacitor.

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Towards bendable piezoelectric oxide semiconductor field effect transistor based touch sensor

Cited by 6 publications

References 12 publications

Device Modelling for Bendable Piezoelectric FET-Based Touch Sensing System

Device Modelling for Bendable Piezoelectric FET-Based Touch Sensing System

Ultra-thin chips for high-performance flexible electronics

Device modelling of silicon based high-performance flexible electronics

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