Towards high performance Cd-free CZTSe solar cells with a ZnS(O,OH) buffer layer: the influence of thiourea concentration on chemical bath deposition

Neuschitzer, Markus; Lienau, Karla; Guc, Maxim; Barrio, Lorenzo Calvo; Haass, Stefan G.; Prieto, Jose Marquez; Sánchez, Yudania; Espíndola‐Rodríguez, Moisés; Romanyuk, Yaroslav E.; Pérez-Rodrı́guez, A.; Izquierdo-Roca, Víctor; Saucedo, Edgardo

doi:10.1088/0022-3727/49/12/125602

Cited by 44 publications

(31 citation statements)

References 36 publications

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“…For instance CdS is not suitable at high S content in the absorber because of a negative CBO ("cliff" alignment) 12,27 . As far as Cd&CRM-free buffer layers are concerned: CBO with ZnO (-0.1 eV) can lead to low VOC 56 , ZnSnO has a suitable CBO with CZTSSe for various S content in absorber [27][28] and if CBO with ZnS(O,OH) can be correctly adjusted 57 , inhomogeneity in this buffer layer can drastically reduce VOC 29 . Insufficient buffer coverage can also lead to decreased VOC 58 .…”

Section: Mapping Of Fundamental Failures In Cd-free Kesterite Solar Cmentioning

confidence: 99%

Analysis of Failure Modes in Kesterite Solar Cells

Grenet

Suzon

Emieux

et al. 2018

ACS Appl. Energy Mater.

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An intense research activity has been carried out in the past few years to improve efficiencies and understand limitations in kesterite based solar cells. Despite notable efforts to determine and list the different failure modes affecting the photovoltaic properties of these devices, very few works try to quantify and classify the effect of these failure modes. In this study, an exhaustive literature review has first been conducted to determine the different causes leading to limited efficiencies in kesterite devices with an additional focus on cadmium free and critical raw material free devices. Second, an original approach has been employed to quantify the impact of these failure modes on solar cells with the evaluation of feedbacks from 18 scientific experts working on kesterite technology. The result of this survey is analyzed, which allow to determine what should be the research priority for the community to improve efficiencies and drive kesterite technology to the market.

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Section: Mapping Of Fundamental Failures In Cd-free Kesterite Solar Cmentioning

confidence: 99%

Analysis of Failure Modes in Kesterite Solar Cells

Grenet

Suzon

Emieux

et al. 2018

ACS Appl. Energy Mater.

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“…The previously stated CZTS‐records are actually both with CdS‐based buffers but with an addition of In and Zn, respectively, to improve performance . Previous work on alternative buffer layers for CZTSSe has been done on ZnO, Zn(O,S), ZnS(O,OH), (Zn,Mg)O, Zn 1−x Cd x S, In 2 S 3 and an “In‐based” buffer …”

Section: Introductionmentioning

confidence: 99%

Zinc‐Tin‐Oxide Buffer Layer and Low Temperature Post Annealing Resulting in a 9.0% Efficient Cd‐Free Cu₂ZnSnS₄ Solar Cell

Ericson¹,

Larsson²,

Törndahl³

et al. 2017

Solar RRL

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Zn 1-x Sn x O y (ZTO) has yielded promising results as buffer material for the full sulfur Cu 2 ZnSnS 4 (CZTS), with efficiencies continuously surpassing its CdS-references. ZTO can be deposited by atomic layer deposition (ALD) enabling tuning of the conduction band position through choice of metal ratio or deposition temperature. Thus an optimization of the conduction band alignment between ZTO and CZTS can be achieved. The ZTO bandgap is generally larger than that of CdS and can therefore yield higher currents due to reduced losses in the short wavelength region. Another advantage is the possibility to omit the toxic Cd. In this study the ALD process temperature was varied from 105 to 165 °C. Current-blocked devices were obtained at 105 °C while the highest open-circuit voltage and device efficiency was achieved for 145 °C. The highest fill factor was seen at 165 °C. The best efficiency reached in this study was 9.0 %, which, to our knowledge, is the highest efficiency reported for Cd-free full-sulfur CZTS. We also show that the effect of heat needs to be taken into 2 account. The results indicate that part of the device improvement comes from heating the absorber, but that the benefit of using a ZTO-buffer is clear.

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“…Among the different alternatives to CdS, Zn(O,S) alloys have been reported as one of the most promising candidates, and high efficiency devices up to 21% efficiency have already been reported with these layers. [3][4][5][6][7] In this case, control of the O/S content ratio is very important in order to ensure an optimal moderate spike-like conduction band alignment at the absorber/buffer heterojunction. 8 However, the analysis of the anion ratio of these buffer layers by non-destructive techniques is still challenging, being the use of techniques as X-ray uo-rescence or X-ray diffraction compromised by either the presence of interactions between the S and Mo signals (being the back contact in the cells constituted by a Mo thin lm) or their very small thickness (typically in the range 20-80 nm).…”

Section: Introductionmentioning

confidence: 99%

Raman scattering quantitative assessment of the anion composition ratio in Zn(O,S) layers for Cd-free chalcogenide-based solar cells

et al. 2016

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Towards high performance Cd-free CZTSe solar cells with a ZnS(O,OH) buffer layer: the influence of thiourea concentration on chemical bath deposition

Cited by 44 publications

References 36 publications

Analysis of Failure Modes in Kesterite Solar Cells

Analysis of Failure Modes in Kesterite Solar Cells

Zinc‐Tin‐Oxide Buffer Layer and Low Temperature Post Annealing Resulting in a 9.0% Efficient Cd‐Free Cu₂ZnSnS₄ Solar Cell

Raman scattering quantitative assessment of the anion composition ratio in Zn(O,S) layers for Cd-free chalcogenide-based solar cells

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Towards high performance Cd-free CZTSe solar cells with a ZnS(O,OH) buffer layer: the influence of thiourea concentration on chemical bath deposition

Cited by 44 publications

References 36 publications

Analysis of Failure Modes in Kesterite Solar Cells

Analysis of Failure Modes in Kesterite Solar Cells

Zinc‐Tin‐Oxide Buffer Layer and Low Temperature Post Annealing Resulting in a 9.0% Efficient Cd‐Free Cu2ZnSnS4 Solar Cell

Raman scattering quantitative assessment of the anion composition ratio in Zn(O,S) layers for Cd-free chalcogenide-based solar cells

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Zinc‐Tin‐Oxide Buffer Layer and Low Temperature Post Annealing Resulting in a 9.0% Efficient Cd‐Free Cu₂ZnSnS₄ Solar Cell