Towards high quality CVD graphene growth and transfer

Deokar, Geetanjali; Ávila, J.; Razado-Colambo, Ivy; Codron, Jean-Louis; Boyaval, Christophe; Galopin, Élisabeth; Asensio, M. C.; Vignaud, D.

doi:10.1016/j.carbon.2015.03.017

Cited by 233 publications

(185 citation statements)

References 52 publications

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“…5, whereα z 0.2, this implies a substrate having linear dimensions of the order of 500 μm. However, such dimensions are nowadays well within the state of the art for the production of high-quality graphene sheets, thanks to the recent advances in chemical vapor deposition (CVD) [35]. Just recently, a large-size and high-quality single-layer graphene film has been synthesized on copper foils by chemical vapor deposition using methane [36].…”

Section: Technological Device Implementationmentioning

confidence: 99%

Complex Mode Spectra of Graphene-Based Planar Structures for THz Applications

Fuscaldo

Burghignoli

Baccarelli

et al. 2015

J Infrared Milli Terahz Waves

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In this work, we analyze in detail the modal properties of a graphene-based planar waveguide (GPW) in the terahertz (THz) frequency range. The structure consists of a graphene sheet placed on the top of a grounded dielectric slab. As is known, the surface conductivity of the graphene sheet can easily be tuned with a bias voltage via electric-field effect; we show here how such a bias affects the propagation features of both TM and TE modes supported by the GPW. An extensive dispersion analysis is performed for complex modes in both guided and radiative (leaky) regimes, considering also dielectric and metal losses as well as nonlocal effects in graphene. In particular, we focus on the behavior of the fundamental leaky modes since they exhibit quite interesting radiation features for suitable values of the bias. These results are very promising for the development of reconfigurable leaky-wave Fabry-Perot cavity antennas based on graphene at THz frequencies

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Section: Technological Device Implementationmentioning

confidence: 99%

Complex Mode Spectra of Graphene-Based Planar Structures for THz Applications

Fuscaldo

Burghignoli

Baccarelli

et al. 2015

J Infrared Milli Terahz Waves

View full text Add to dashboard Cite

show abstract

“…Various physical and chemical processes such as the gas evaporation [6][7][8], hydrothermal [9][10][11], sputtering [12,13], and sol-gel method [14][15][16][17] have been used to synthesize nanomaterials. However, these techniques are usually expensive and complicated.…”

Section: Introductionmentioning

confidence: 99%

External-Electric-Field-Enhanced Uniformity and Deposition Rate of a TiO2 Film Prepared by the Sparking Process

et al. 2018

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We have used an external electric field to increase both the uniformity and deposition rate of TiO2 films. The experiment is carried out by sparking-off titanium wires with a high dc voltage of 1 kV (field int = 10 kV/cm) and a limited current of 3 mA. The external electric fields ( ext) of 3, 6, and 9 kV/cm were applied to the sparking system for 1-5 hours. The as-deposited film morphology was characterized by scanning electron microscopy. The results clearly show that the films are only deposited on the external electric field area. Furthermore, the deposition rate of the films increased from 40.7% to 77.8% in the presence of the external electric field of 9 kV/cm. The effects of an external electric field on both the deposition rate and uniformity of films are investigated and described. K e y w o r d s: TiO2 film, sparking process, external electric fields.

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“…Among different metals with proved catalytic action towards graphene synthesis, Cu seems to be the best choice, as thin and flexible Cu foils are available at high purity and low cost. Additionally, the carbon solubility in Cu at a standard graphene growth temperatures is extremely low, therefore decomposition of carbon precursors form graphene directly on top of Cu is possible [19].…”

Section: Introductionmentioning

confidence: 99%

Comparative Morphological Analysis of Graphene on Copper Substrate obtained by CVD from a Liquid Precursor

et al. 2017

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Graphene film has been produced on untreated Cu substrate by a chemical vapor deposition technique in ambient pressure with liquid ethanol serving as the carbon precursor. The obtained material has been subjected to morphological study, directly on Cu substrate, by means of optical microscopy, scanning electron microscopy, atomic force microscopy, and a detailed Raman analysis. As a benchmark material, graphene obtained on Cu by a conventional CVD from gaseous methane was used. This simple experimental setup has proved to enable obtaining large area graphene samples with nearly 100% substrate coverage and large domains of one carbon layer. As compared to graphene from gaseous precursor, the presented approach resulted in visibly more defects and impurities. These imperfections are due to more complex precursor molecular structure and lack of Cu pretreatment with hydrogen, the later cause being easy to eliminate in course of further optimization of the method. The described approach can be regarded as a viable, low-cost, and experimentally simple alternative for the existing techniques of producing large area graphene. By providing direct comparison with the conventional method, the paper's intention is to provide deeper insight and to fill gap in the understanding of mechanisms involved in graphene formation on copper.

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Towards high quality CVD graphene growth and transfer

Cited by 233 publications

References 52 publications

Complex Mode Spectra of Graphene-Based Planar Structures for THz Applications

Complex Mode Spectra of Graphene-Based Planar Structures for THz Applications

External-Electric-Field-Enhanced Uniformity and Deposition Rate of a TiO2 Film Prepared by the Sparking Process

Comparative Morphological Analysis of Graphene on Copper Substrate obtained by CVD from a Liquid Precursor

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