Towards nonvolatile memory devices based on ferroelectric polymers

Tsutsumi, Naoto; Bai, Xue; Sakai, Wataru

doi:10.1063/1.3691825

Cited by 14 publications

(27 citation statements)

References 16 publications

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“…The samples start exhibiting well saturated ferroelectric hysteresis loops after the applied voltage exceeds 30 V. The average remnant polarization (P r ) was 6.2 ± 0.07 lC/cm 2 with a coercive field (E c ) of 1.51 ± 0.086 MV/cm, measured at an applied voltage of 70 V. It must be mentioned here that our devices showed saturated ferroelectric loops well up to 100 V (maximum limit of our ferroelectric tester), suggesting high breakdown strength of the devices. Typical E c values of P(VDFTrFE) thin films as reported in literature vary between 0.6 and 0.8 MV/cm [7,19] and occasionally as high as 1.4 MV/cm [20]. However, in most of these reports, film cooling conditions are seldom reported precisely which, as we show later, have significant influence on E c .…”

Section: Resultsmentioning

confidence: 86%

Cooling rate controlled microstructure evolution and reduced coercivity in P(VDF–TrFE) devices for memory applications

Singh

Garg

2014

Organic Electronics

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Section: Resultsmentioning

confidence: 86%

Cooling rate controlled microstructure evolution and reduced coercivity in P(VDF–TrFE) devices for memory applications

Singh

Garg

2014

Organic Electronics

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“…Originally, ferroelectric ceramics have been of significant interest for applications like sonars, inkjet transducers and so on, then followed by ferroelectric crystals that exhibit giant electromechanical effects. Nowadays however, particular trends and demands in terms of applications in flexible transducers, for instance artificial muscles, flexible sensors for Structural Health Monitoring or haptic devices, and ferroelectric transistors and memories, have drawn significant attention on electroactive polymers (EAP). Ferroelectric polymers are a particular class of EAPs, that feature long‐term remnant polarization, allowing them to be used as piezoelectric transducers, for example.…”

Section: Introductionmentioning

confidence: 99%

Modeling of hysteretic behavior in ferroelectric polymers

Lallart

Sebald

Capsal

et al. 2015

J. Polym. Sci. Part B: Polym. Phys.

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Controlling the polarization state of ferroelectric materials, and more particularly piezoelectric polymers, is critical to ensure good operation of actuators or sensors using such energy conversion mechanisms. More specifically, the modeling and prediction of the hysteretic behavior of such materials is a critical aspect for the fabrication of robust and accurate devices. The purpose of this article is to present a model based on mathematical functions describing hysteretic behavior as a sum of elementary polarizations arising from combined avalanche and saturation physical effects. Predicted responses show good agreement with experimental measurements, and extension of the model for taking into account electric field-induced crystallization during operations is presented. Finally, the proposed model is simple to implement and does no require heavy computational and memory requirements, as it relies on pure mathematical functions and only requires unidimensional distribution of elementary polarizations.

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“…To obtain sufficient remanent polarization at a higher cycling frequency of 100 kHz, we applied a high electric field of 278 MV·m −1 to the P(VDF-TrFE) copolymer [5]. However, this field is too high to apply in electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric Switching of Vinylidene and Trifluoroethylene Copolymer Thin Films on Au Electrodes Modified with Self-Assembled Monolayers

et al. 2014

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The ferroelectric switching characteristics of a vinylidene fluoride and trifluoroethylene copolymer were significantly changed via the chemical modification of a gold electrode with an alkanethiol self-assembled monolayer (SAM). The alkanethiol SAM-Au electrode successfully suppressed the leakage current (dark current) from the electrode to the bulk ferroelectric. Smaller leakage currents led to the formation of an effective electric field in the bulk ferroelectric. At switching cycles ranging from 10 to 100 kHz, significant changes in the ferroelectric properties were observed. At 100 kHz, a remanent polarization (Pr) of 68 mC·m−2 was measured, whereas a very small Pr value of 2.4 mC·m−2 was measured for the sample without a SAM. The switching speed of the SAM-Au electrode is as twice as fast as that of the unmodified electrode. A large potential barrier was formed via the insertion of a SAM between the Au electrode and the ferroelectric, effectively changing the ferroelectric switching characteristics.

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Towards nonvolatile memory devices based on ferroelectric polymers

Cited by 14 publications

References 16 publications

Cooling rate controlled microstructure evolution and reduced coercivity in P(VDF–TrFE) devices for memory applications

Cooling rate controlled microstructure evolution and reduced coercivity in P(VDF–TrFE) devices for memory applications

Modeling of hysteretic behavior in ferroelectric polymers

Ferroelectric Switching of Vinylidene and Trifluoroethylene Copolymer Thin Films on Au Electrodes Modified with Self-Assembled Monolayers

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