Towards RF graphene devices: A review

Colmiais, Ivo; Silva, Vítor; Borme, Jérôme; Alpuim, P.; Mendes, Paulo

doi:10.1016/j.flatc.2022.100409

Cited by 17 publications

(21 citation statements)

References 146 publications

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“…Two-dimensional (2D) materials have attracted researchers due to their unique properties. Their optical, electronic, and mechanical properties indicate that these materials have great potential for novel applications in electronics and optoelectronics [ 1 , 2 , 3 , 4 ]. An example of such material is graphene, which is a 2D material that is constituted by carbon, structured in a one-atom-thick honeycomb layer.…”

Section: Introductionmentioning

confidence: 99%

“…An example of such material is graphene, which is a 2D material that is constituted by carbon, structured in a one-atom-thick honeycomb layer. Graphene is an attractive material for electronic and radio frequency (RF) applications due to its high carrier mobility and high current density [ 2 , 5 , 6 , 7 ]. These characteristics make it an attractive material for RF passive components such as inductors and capacitors.…”

Section: Introductionmentioning

confidence: 99%

“…These characteristics make it an attractive material for RF passive components such as inductors and capacitors. Through graphene’s kinetic inductance and high conductivity, it claims an improvement of Q-factors and an increase of inductance density values, thus reducing the total area of integrated circuits [ 2 , 5 , 8 , 9 , 10 , 11 ]. Furthermore, graphene capacitors can make use of their tunability to enable variable capacitors that are controlled through direct current (DC) biasing, making use of its quantum capacitance [ 2 , 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

“…Through graphene’s kinetic inductance and high conductivity, it claims an improvement of Q-factors and an increase of inductance density values, thus reducing the total area of integrated circuits [ 2 , 5 , 8 , 9 , 10 , 11 ]. Furthermore, graphene capacitors can make use of their tunability to enable variable capacitors that are controlled through direct current (DC) biasing, making use of its quantum capacitance [ 2 , 12 , 13 , 14 ]. However, due to the particular characteristics and novelty of 2D materials, such as graphene, the methods for extraction of the required design properties at RF frequencies are still under development and assessment.…”

Section: Introductionmentioning

confidence: 99%

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Extraction of Graphene’s RF Impedance through Thru-Reflect-Line Calibration

et al. 2023

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Graphene has unique properties that can be exploited for radiofrequency applications. Its characterization is key for the development of new graphene devices, circuits, and systems. Due to the two-dimensional nature of graphene, there are challenges in the methodology to extract relevant characteristics that are necessary for device design. In this work, the Thru-Reflect-Line (TRL) calibration was evaluated as a solution to extract graphene’s electrical characteristics from 1 GHz to 65 GHz, where the calibration structures’ requirements were analyzed. It was demonstrated that thick metallic contacts, a low-loss substrate, and a short and thin contact are necessary to characterize graphene. Furthermore, since graphene’s properties are dependent on the polarization voltage applied, a backgate has to be included so that graphene can be characterized for different chemical potentials. Such characterization is mandatory for the design of graphene RF electronics and can be used to extract characteristics such as graphene’s resistance, quantum capacitance, and kinetic inductance. Finally, the proposed structure was characterized, and graphene’s resistance and quantum capacitance were extracted.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Extraction of Graphene’s RF Impedance through Thru-Reflect-Line Calibration

et al. 2023

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“…[17] But the absence of energy bandgap has made it unsuitable for semiconductor device applications and digital electronics applications which require high on-state and low off-state currents. [18] This eventually paved the way for various other 2D materials such as black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D layer materials (2DLMs), and MXenes. [19] Both monolayers (MLs) and heterostructure devices based on the new 2D materials started showing strong potential in high-speed electronics, optoelectronics, valley electronics, flexible devices, memory devices, and sensors applications.…”

mentioning

confidence: 99%

Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects

Meena

Sharma

Jogi

2023

Physica Status Solidi (a)

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The objectives of the semiconductor industry include scaling down the silicon (Si)-based devices from bulk to nanoscale, reducing the effective cost, and improving the performance of the device. [1] Semiconductor devices such as metal-oxide semiconductor field-effect transistors (MOSFETs), field-effect transistors (FETs), complementary metal oxide semiconductor (CMOS) transistors, and other semiconductor devices with different architectures and scaling properties have been analyzed according to the guidelines of International Technology Roadmap for Semiconductors (ITRS), International Roadmap for Devices and Systems (IRDS), and Nano Electronics Roadmap for Europe: Identification and Dissemination (NEREID). Moore's law, followed for subsequent scaling down of MOSFETs, FETs, and CMOS devices using 3D semiconductors (Si, gallium nitride, and gallium arsenide), has become irrelevant in the nanoregime. [2,3] Challenges such as device degradation due to short channel effects, leakage current leading to mobility degradation, and heat dissipation issues or "heat death" of conventional 3D semiconductor-based nanodimensional CMOS devices and electronic circuits are faced due to dangling bonds, surface scattering states, undesirable coupling with phonons, creation of interface states, manifestation of the leakage current, static power problem, and large subthreshold swing (SS). [4][5][6] Search for alternate channel materials has been trending in the 2D semiconductor research in order to meet the above mentioned challenges.Richard Feynman, in 1959, introduced researchers to the concept of nanodimensions (<100 nm) and nanotechnology. The semiconductor industry has come a long way since then with newly engineered nanostructures such as carbon nanotubes (CNT), quantum dots, quantum wires, and nanofibers that have led to great advancements in nanotechnology with applications in biomedicine, pharmaceuticals, cosmetics, and environmental issues. [7] Nanomaterials are usually classified into four types based on quantum confinement and the device dimensions, at least one of which is in the nanorange (from 1 to 100 nm). Different types of nanomaterials are represented in Figure 1 and are described as follows. 1) 3D nanomaterials: The nanomaterials for which all three dimensions lie outside the nanometric scale (1-100 nm) are termed as 3D materials. The electrons are free to move in all three directions and thus there is no confinement or limitation for the flow of charge carriers. The bulk 3D nanomaterials consist of bundles of nanowires, nanotubes, bulk powders, or nanoparticles and multiple nanolayers or polycrystals. 2) 2D nanomaterials. The 2D nanomaterials have only one dimension in the nanometric scale whereas the other two dimensions lie outside the nanoscale (1-100 nm). These are similar to a planar structure. The electrons can easily move in two directions and are confined in one direction, for example, nano thin films, nanocoatings, nanolayers, nanosheets, etc. for 2D quantum well systems. 3) 1D nanomaterials: These nanoma...

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Cost‐Effective Conductive Paste for Radiofrequency Devices Using Carbon‐Based Materials

Curreli,

Dessì,

Lodi

et al. 2024

Small Science

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With the increasing demand for compact, lightweight, cost‐effective, and high‐performance radiofrequency (RF) devices, the development of low‐profile antennas becomes crucial. This article presents a study of a novel carbon–cellulose‐based paste intended for screen printing RF devices. The investigation specifically explores the application of high‐reactivity carbon mixture (HRCM) particles as conductive fillers. The results demonstrate that optimal electrical conductivity values and discrete electromagnetic dipole performances can be achieved at lower concentrations of solid conductive material compared to conventional pastes, for similar applications. This offers benefits in terms of total cost, material consumption, and environmental impact. The paste formulation showcases a complex non‐Newtonian behavior, where yielding flow and thixotropicity are found to be independent and dependent on preshear conditions, respectively. This behavior can be attributed to the network orientation and rearrangement of filler structures within the paste system, which in turn are responsible for filler pattern uniformity and overall printing quality. Compared to traditional conductive materials, HRCM pastes are proven to be a viable alternative for RF devices fabrication, including printed Wi‐Fi antennas.

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Towards RF graphene devices: A review

Cited by 17 publications

References 146 publications

Extraction of Graphene’s RF Impedance through Thru-Reflect-Line Calibration

Extraction of Graphene’s RF Impedance through Thru-Reflect-Line Calibration

Sub‐5 nm 2D Semiconductor‐Based Monolayer Field‐Effect Transistor: Status and Prospects

Cost‐Effective Conductive Paste for Radiofrequency Devices Using Carbon‐Based Materials

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