Trade-Off between Parasitic Deposition and SiC Homoepitaxial Growth Rate Using Halogenated Si-Precursors

Sudarshan, Tangali S.; Rana, Tawhid; Song, Haizheng; Chandrashekhar, M. V. S.

doi:10.1149/2.017308jss

Cited by 9 publications

(11 citation statements)

References 53 publications

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“…In most cases, Cl has been used for this purpose. Recent research also found that Br and F chemistries are applicable to SiC CVD [33][34][35] .…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 98%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

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“…In most cases, Cl has been used for this purpose. Recent research also found that Br and F chemistries are applicable to SiC CVD [33][34][35] .…”

Section: Chemical Vapor Deposition (Cvd) Of Sicmentioning

confidence: 98%

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

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“…Moreover, since a thick drift layer of at least 10 μm or more is required for most of the SiC power devices, a large amount of by-product due to iteration of epitaxial growth are formed in CVD reactor, having harmful effect on epitaxial growth [13], [14]. In order to reduce the harmful effect on the epitaxial growth due to by-product in the reactor, short maintenance period is required for mass production of 4H-SiC epitaxial films, resulting obstacles to high productivity.…”

Section: Influence and Suppression Of Harmful Effects Due To By-product In Cvd Reactor For 4h-sic Epitaxymentioning

confidence: 99%

“…In the vertical CVD reactor to grow 4H-SiC films, it is known that parasitic deposition is likely to be formed at around gas inlet which is heated by radiation from the high temperature wafer and hot-wall. It has been reported that Si droplets and SiC particles are attached to the wafer due to by-product formed in the gas inlet [14]. In this paper, halogenated Si precursors instead of SiH 4 gas was proposed to reduce the byproduct formed in the gas inlet.…”

Section: B Influence Of Si Deposit Formed On the Gas Nozzlesmentioning

confidence: 99%

Influence and Suppression of Harmful Effects Due to By-Product in CVD Reactor for 4H-SiC Epitaxy

Daigo¹,

Watanabe²,

Ishiguro³

et al. 2021

IEEE Trans. Semicond. Manufact.

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Suppression of harmful effect due to by-product on homo-epitaxial growth of 4H-SiC films using a high speed wafer rotation vertical CVD method was demonstrated. Influence of byproduct, such as 3C-SiC deposit on a hot-wall and Si deposit on gas nozzles, formed during the epitaxial growth was investigated in two comparative studies. The analysis of triangular defects with 3C-SiC down-falls on the films revealed that the most of the down-falls which were peeled from the hot-wall adhered to the wafers before the epitaxial growth. By increasing the wafer rotation speed to 300 rpm just after wafer loading into the reactor, the down-falls dropped towards the wafer surface were effectively eliminated, and the maintenance period of the reactor could be increased more than 4 times compared to the case of maintaining the wafer rotation speed of 50 rpm until just before epitaxial growth step. Additionally, the relationship between Si deposit formed on the gas nozzles in the gas inlet and fluctuation of thickness and doping concentration of the films suggested that Si deposit formed on the gas nozzles acts as a trap site of Si source gas. By suppression of the Si deposit using optimizing gas flow condition, no significant fluctuation of thickness and doping concentration of the films were observed and the maintenance period of the gas nozzles could be increased more than 3 times compared to the epitaxial growth using the nozzles on which Si deposit was formed.

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“…Good 4H-SiC homoepitaxial growth can be achieved by i) Increasing temperature to encourage desorption of growth species from the terrace surfaces, although this can also reduce growth rate by increasing desorption from step-sites; ii) by using off-cut substrates as discussed above and iii) by changing the chemistry of the CVD process, which in turn affects the surface kinetics, thereby breaking certain inherent tradeoffs in the growth [18]. Previous studies have used this method to varying degrees of success [19], particularly with the addition of halogens to the growth to increase the volatility of growth species on the terrace surfaces.…”

Section: Introductionmentioning

confidence: 99%

4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

Balachandran

Song

Sudarshan

et al. 2016

Journal of Crystal Growth

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We report high quality homoepitaxial growth on nearly on-axis () 4H-SiC substrates by chemical vapor deposition (CVD) using Tetrafluorosilane and Propane as Si and C-precursors, respectively. N-type unintentional doping (10 17 cm-3 to 10 14 cm-3) was obtained for 0.62.0, a linear dependence on C-flow is established, with a return to stepmediated growth, shown by the surface morphology (RMS roughness~1nm), and high polytype uniformity from Raman at high R g-14um/hr. These two behaviors were ascribed to a decrease in the etch rate of SiC by SiF 4 with increasing C/Si due to C-aided decomposition of SiF 4 , both of which make available a greater amount of elemental Si at the surface, thereby suppressing spiral growth. Use of on-axis or near on-axis substrates can eliminate/reduce basal plane dislocations which limit the performance of SiC bipolar electronic devices.

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Trade-Off between Parasitic Deposition and SiC Homoepitaxial Growth Rate Using Halogenated Si-Precursors

Cited by 9 publications

References 53 publications

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Influence and Suppression of Harmful Effects Due to By-Product in CVD Reactor for 4H-SiC Epitaxy

4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

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