Transconductance Linearity Analysis of 1-D, Nanowire FETs in the Quantum Capacitance Limit

Razavieh, Ali; Janes, David B.; Appenzeller, Joerg

doi:10.1109/ted.2013.2259238

Cited by 9 publications

(7 citation statements)

References 24 publications

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“…Typically, if ΔE is larger than about 4k B T, individual one-dimensional (1D) modes can be resolved. 43 Figure 4c shows measurements of transfer characteristics at 100 K (4k B T µ 35 meV) for NWFETs with similar diameters as considered in Figure 4a. Contributions from individual 1D modes can be clearly distinguished for the smallest NWFET and become less pronounced for increasing wire diameter, consistent with the expectations from the simulations.…”

Section: Discussionmentioning

confidence: 99%

Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

et al. 2014

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The effect of diameter variation on electrical characteristics of long-channel InAs nanowire metal-oxide-semiconductor field-effect transistors is experimentally investigated. For a range of nanowire diameters, in which significant band gap changes are observed due to size quantization, the Schottky barrier heights between source/drain metal contacts and the semiconducting nanowire channel are extracted considering both thermionic emission and thermally assisted tunneling. Nanowires as small as 10 nm in diameter were used in device geometry in this context. Interestingly, while experimental and simulation data are consistent with a band gap increase for decreasing nanowire diameter, the experimentally determined Schottky barrier height is found to be around 110 meV irrespective of the nanowire diameter. These observations indicate that for nanowire devices the density of states at the direct conduction band minimum impacts the so-called branching point. Our findings are thus distinctly different from bulk-type results when metal contacts are formed on three-dimensional InAs crystals.

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Section: Discussionmentioning

confidence: 99%

Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

et al. 2014

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“…This unique growth mode yields high quality ultrathin InAs NWs that are suitable for the fabrication of devices with potential applications in high speed, low power, and high linearity nano-electronics. 16,17…”

Section: Introductionmentioning

confidence: 99%

Ultrathin InAs nanowire growth by spontaneous Au nanoparticle spreading on indium-rich surfaces

Jung

Mohseni

2014

Nanoscale

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Ultrathin InAs nanowires (NWs) can enable true one-dimensional electronics. We report a growth phenomenon where a bimodal size distribution (∼ α nm and ∼ 5 nm in diameter) of InAs NWs can be achieved from gold (Au) nanoparticles of a single size, α (α = 50-250 nm). We determine that ultrathin InAs NW growth is seeded by ultra-small Au nanoparticles shed from the large Au seeds upon indium (In) introduction into the growth system and formed prior to the supersaturation of In in Au. The Au spreading phenomenon is explained by the balancing of Gibbs free energy lowering from In-Au mixing and the surface tension increase. Ultrathin InAs NWs formed in this way exhibit a perfect wurtzite structure with no stacking faults. We have observed InAs NWs with diameters down to ∼ 2 nm using our growth method. Passivating the ultrathin InAs NWs with an AlAs shell, subsequently oxidized in air, results in physical deformation of the InAs core, demonstrating the mechanical pliability of these ultrathin NWs.

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“…conductance quantization due to subband formation [4][5][6]. Silicon nanowires on silicon-on-insulator (SOI) substrates have recently been shown to be promising candidates for future low-power and radio frequency (RF) applications [6][7][8][9]. …”

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confidence: 99%

“…The device hence operates in between the classical, charge controlled limit (β → 0) and the quantum capacitance limit (β → 1) [9]. Similar to the RF transconductance, one can obtain the total gate capacitance from RF Y-parameter measurements as Y 11 (ω)) = jω(C gs + C gd ).…”

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confidence: 99%

High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

Betz¹,

Barraud²,

Wilmart³

et al. 2014

Applied Physics Letters

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We report on DC and microwave electrical transport measurements in silicon-on-insulator CMOS nano-transistors at low and room temperature. At low source-drain voltage, the DC current and RF response show signs of conductance quantization. We attribute this to Coulomb blockade resulting from barriers formed at the spacer-gate interfaces. We show that at high bias transport occurs thermionically over the highest barrier: Transconductance traces obtained from microwave scattering-parameter measurements at liquid helium and room temperature is accurately fitted by a thermionic model. From the fits we deduce the ratio of gate capacitance and quantum capacitance, as well as the electron temperature.Recent CMOS technology allows for the fabrication of silicon-on-insulator structures of nano-metric size. Depending on fabrication strategy, charge transport in these devices can be quasi-zero-or one-dimensional:Field-effect devices based on narrow silicon channels with spacer regions surrounding the gate can exhibit single-electron-transistor * Electronic address: ab2106@cam.ac.uk (SET) characteristics [1][2][3], whereas gate-allarround nanowires formed in Si fins show 1D behavior, e.g. conductance quantization due to subband formation [4][5][6]. Silicon nanowires on silicon-on-insulator (SOI) substrates have recently been shown to be promising candidates for future low-power and radio frequency (RF) applications [6][7][8][9].

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Transconductance Linearity Analysis of 1-D, Nanowire FETs in the Quantum Capacitance Limit

Cited by 9 publications

References 24 publications

Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors

Ultrathin InAs nanowire growth by spontaneous Au nanoparticle spreading on indium-rich surfaces

High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors

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