Transfer-Free Bilayer Graphene FETs: Application as Memory Devices

Abstract

In this paper we report on the application of in-situ CCVD grown bilayer graphene transistors (BiLGFETs) suitable as memory devices. By means of catalytic chemical vapor deposition (CCVD) the BiLGFETs are realized directly on oxidized silicon substrate without transfer. These BiLGFETs possess unipolar p-type device characteristics with a high on/off-current ratio between 1x10 5 and 1x10 7 at room temperature. The hysteresis of BiLGFETs depends on the cycling range of the applied backgate voltage V BG while the sub-threshold slope is uniform for varied temperatures and varied cycling ranges of the backgate voltage. Based on the observed properties of BiLGFETs it is possible to use BiLGFETS as memory devices.