Transfer-Free Growth of Bi₂O₂Se on Silicon Dioxide via Chemical Vapor Deposition

Abstract

The bismuth oxyselenide (Bi2O2Se) is considered as an alternative to graphene (zero band gap), black phosphorus, and molybdenum sulfide (MoS2) due to its sizeable band gap and high carrier mobility. To date, Bi2O2Se is fabricated on the top of mica using two to three sources under dual heating zones inside a chemical vapor deposition tube followed by its transfer on a desired substrate for particular device application. Herein, we have proposed an entirely new growth mechanism to synthesize Bi2O2Se directly on silicon dioxide (SiO2) using single source bismuth selenium (Bi2Se3) to get rid of the transfer process. The as-grown Bi2O2Se flakes were mechanically, structurally, and topographically investigated to ensure the quality of flakes. Young’s modulus ∼ 65 GPa of as-grown Bi2O2Se is thickness dependent, indicating the successful fabrication of Bi2O2Se on SiO2 as the Young’s modulus of Bi2Se3 ∼ 44–58 GPa is far lower than that of Bi2O2Se. The structure of as-synthesized Bi2O2Se provided evidence of successful fabrication of Bi2O2Se on SiO2. The field-effect-transitor device showed n-type semiconducting material with high current on/off ratio (∼108) and field-effect mobility of ∼70 cm2 V–1 s–1 which is comparable to those of traditional transition metal dichalcogenides. Technologically, the transfer-free growth of Bi2O2Se will generate high-quality hybrid material on SiO2, which can play a crucial role in highly efficient electronics.

Inclined Ultrathin Bi2O2Se Films: A Building Block for Functional van der Waals Heterostructures

“…From the mobility data of these four devices in the inset of Figure 3b, the maximum value could approach 230 cm 2 V −1 s −1 . In Figure 3c, compared with the previous works of in-planed Bi 2 O 2 Se grown on mica and transferred with corrosive acids and adhesive polymers, 22,31,32 the FETs based on inclined Bi 2 O 2 Se exhibit better device performance on SiO 2 /Si. By adopting high-k dielectric layers, 33,34 the carrier mobility could be further improved.…”

Salt‐Assisted Low‐Temperature Growth of 2D Bi2O2Se with Controlled Thickness for Electronics

“…[25] The moderate bandgap (≈0.8 eV) and competent light absorption make Bi 2 O 2 Se an opportune semiconducting material for electronic applications. [26][27][28][29][30][31] In order to achieve Bi 2 O 2 Se-based FETs, the acquisition of large-sized atomically thin 2D material is of considerable significance. So far, 2D Bi 2 O 2 Se has been synthesized by various techniques, including molecular beam epitaxy (MBE), [32] pulsed laser deposition (PLD), [33] wet-chemical methods, [34][35][36][37] physical vapor deposition (PVD), [30] and CVD method.…”

The effects of tungsten doping on the mechanical properties of Bi2O2Se

“…66 The calculational details are described in Supporting Information. Table 3 summarizes the calculated results, along with other calculations 24 and experimental results 67,68 for comparison. The calculated results of B = 83.21 GPa, G = 29.59 GPa, and E = 79.36 GPa for Bi 2 O 2 Se are comparable to the theoretical values of B = 81.42 GPa, G = 27.38 GPa, and E = 73.56 GPa reported by Liu and coworkers.…”