Semiconductor nanowire based devices are amongst the most promising structures to meet the current challenges of electronics, optics and photonics. Due to their high surface-volume ratio and excellent optical and electrical properties, low power, high efficiency and high-density devices can be achieved. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here we demonstrate a technique to transfer large area nanowire arrays to flexible substrates whilst retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalysed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core-shell nanowires are embedded in a dielectric, removed by reactive ion beam etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages