Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

Liu, Liting; Kong, Lingan; Li, Qianyuan; He, Chenglin; Ren, Liwang; Tao, Quanyang; Yang, Xiangdong; Lin, Jun; Zhao, Bei; Li, Zhiwei; Chen, Yang; Li, Wanying; Song, Wenbin; Lu, Zheyi; Li, Guoli; Li, Siyu; Duan, Xidong; Pan, Anlian; Liao, Lei; Liu, Yuan

doi:10.1038/s41928-021-00566-0

Cited by 183 publications

(148 citation statements)

References 33 publications

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“…Further, we hope to provide a practical route for scientists to integrate novel or ultrathin materials incompatible with traditional approaches into electronic devices beyond the reach of existing methods as we have observed plenty of times how aggressive metal evaporation can be, especially for device with a vertical configuration. [12] Moreover, the nondestructive metal integration approach holds a huge potential for fundamental studies (intrinsic physical and chemical properties) and V set and V COND are simultaneously applied to memristors Q and P, respectively. R G is chosen to be 500 Ω. d) Experimental results of IMP operations for four input conditions.…”

Section: Discussionmentioning

confidence: 99%

“…Further, we hope to provide a practical route for scientists to integrate novel or ultrathin materials incompatible with traditional approaches into electronic devices beyond the reach of existing methods as we have observed plenty of times how aggressive metal evaporation can be, especially for device with a vertical configuration. [ 12 ] Moreover, the nondestructive metal integration approach holds a huge potential for fundamental studies (intrinsic physical and chemical properties) and offers promising perspective in realizing unprecedented device performance by creating a damage‐ and contamination‐free platform in various application scenarios, not limited to memristors and transistors, in the meantime flexible in material selection. [ 64 ]…”

Section: Discussionmentioning

confidence: 99%

“…[ 8–10 ] However, during the metal contact preparation (evaporation) process, metal in‐diffusion induced by metal atoms bombardment may lead to severe structural/interfacial deterioration of the physical and chemical properties of the switching medium, degrading memristive performance (stability and variation) or even device yield, especially for device with vertical configuration. [ 11,12 ]…”

Section: Introductionmentioning

confidence: 99%

“…[8][9][10] However, during the metal contact preparation (evaporation) process, metal in-diffusion induced by metal atoms bombardment may lead to severe structural/interfacial deterioration of the physical and chemical properties of the switching medium, degrading memristive performance (stability and variation) or even device yield, especially for device with vertical configuration. [11,12] Soft metal transfer approach provides a practical route for the fabrication of high-performance devices with a damage-free van der Vaals (vdW) metal/active material contact by transferring a predefined metal pattern from a donor to a target substrate in a mechanically assembly way. [11,13] This approach physically assembles a clean and atomically sharp interface without chemical bonding to avoid the side effects of metal-ion diffusion and structural damage in a clean and low-energy manner.…”

mentioning

confidence: 99%

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A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Mao

Ding

et al. 2022

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2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin materials and uncontrolled defects at interfaces upon metallization, which hindered the development of reliable devices. Here, a damage‐free Au/h‐BN/Au memristor is reported using a clean, water‐assisted metal transfer approach by physically assembling Au electrodes onto the layered h‐BN which minimized the structural damage and undesired interfacial defects. The memristors demonstrate significantly improved performance with the coexistence of nonpolar and threshold switching as well as tunable current levels by controlling the compliance current, compared with devices with evaporated contacts. The devices integrated into an array show suppressed sneak path current and can work as both logic gates and latches to implement logic operations allowing in‐memory computing. Cross‐sectional scanning transmission electron microscopy analysis validates the feasibility of this nondestructive metal integration approach, the crucial role of high‐quality atomically sharp interface in resistive switching, and a direct observation of percolation path. The underlying mechanism of boron vacancies‐assisted transport is further supported experimentally by conductive atomic force microscopy free from process‐induced damage, and theoretically by ab initio simulations.

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Section: Discussionmentioning

confidence: 99%

“…Further, we hope to provide a practical route for scientists to integrate novel or ultrathin materials incompatible with traditional approaches into electronic devices beyond the reach of existing methods as we have observed plenty of times how aggressive metal evaporation can be, especially for device with a vertical configuration. [ 12 ] Moreover, the nondestructive metal integration approach holds a huge potential for fundamental studies (intrinsic physical and chemical properties) and offers promising perspective in realizing unprecedented device performance by creating a damage‐ and contamination‐free platform in various application scenarios, not limited to memristors and transistors, in the meantime flexible in material selection. [ 64 ]…”

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Mao

Ding

et al. 2022

Small

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“…Complementary logic functions such as NAND and NOR, high-quality Schottky junction with ideality factor close to 1.0, and sub-1 nm vertical transistors have been demonstrated for dopingfree TMDs using transferred 3D metal contacts. [44,[103][104][105][106] However, the physics behind vanished orbital overlap and interface dipoles for suppressing FLP requires further investigations.…”

Section: Transferred Metal Contactsmentioning

confidence: 99%

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

et al. 2022

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Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices. However, researchers face formidable challenges in 2D device processing mainly originated from the out‐of‐plane van der Waals (vdW) structure of ultrathin 2D materials. As major challenges, untunable Schottky barrier height and the corresponding strong Fermi level pinning (FLP) at metal interfaces are observed unexpectedly with 2D vdW materials, giving rise to unmodulated semiconductor polarity, high contact resistance, and lowered device mobility. Here, FLP observed from recently developed 2D semiconductor devices is addressed differently from those observed from conventional semiconductor devices. It is understood that the observed FLP is attributed to inefficient doping into 2D materials, vdW gap present at the metal interface, and hybridized compounds formed under contacting metals. To provide readers with practical guidelines for the design of 2D devices, the impact of FLP occurring in 2D semiconductor devices is further reviewed by exploring various origins responsible for the FLP, effects of FLP on 2D device performances, and methods for improving metallic contact to 2D materials.

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Two‐Dimensional Semiconductors for Photodetection

Sun¹,

Yang²,

Yao³

et al. 2022

Digital Encyclopedia of Applied Physics

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Since the discovery of graphene, two‐dimensional (2D) semiconductors have attracted intensive interest due to their unique properties. In particular, 2D semiconductors possess unique physics and superior performance for light–matter interactions in a comparison with three‐dimensional (3D) bulk counterparts. In this article, the general electronic and optoelectronic properties of 2D semiconductors will be firstly introduced. Then the technical approaches for tuning their electronic properties including both energy bandgap engineering and doping will be presented. Electrical contacts of 2D semiconductor devices as another technical challenge will also be discussed. Finally, the application of 2D semiconductors in photodetectors, including both the light–matter interaction mechanisms and the metric benchmarking of recent advances will be summarized.

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Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors

Cited by 183 publications

References 33 publications

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

A van der Waals Integrated Damage‐Free Memristor Based on Layered 2D Hexagonal Boron Nitride

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

Two‐Dimensional Semiconductors for Photodetection

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