Transformation of microcrystalline state of hydrogenated silicon to amorphous one due to presence of more electronegative impurities

Hiraki, Akio; Fukushima, Yoshito; Sato, Takashi; Kiyono, Hideki; Terauchi, H.; Imura, Takeshi

doi:10.1016/0022-3093(83)90289-2

Cited by 14 publications

(3 citation statements)

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“…11 are in agreement with previously published data. 2,3 Once again, despite the H-Cl mutual removal mechanism, sample 8 still has twice as much bonded hydrogen as sample 6. This seems to indicate that the grain boundaries in sample 8 are more Hpassivated than the ones in sample 6.…”

Section: Discussionmentioning

confidence: 96%

“…The exploration of other ranges of frequencies has led to the conclusion that the deposition rate rises with increasing excitation frequency. 1 Microcrystallinity was obtained in the early eighties, 2,3 and more recently by the use of either high deposition temperatures 4 or H 2 dilution of the source gas. 5 Under certain plasma conditions, H 2 increases the volume fraction of microcrystals by preferentially etching a-Si:H. 6,7 Relatively little work has been done to explore the effects of adding source gases aside from SiF 4 .…”

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confidence: 99%

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Effects of SiH[sub 2]Cl[sub 2] on the Deposition and Properties of Amorphous and Microcrystalline Silicon Fabricated from Very High Frequency Glow Discharges

Mulato¹,

Wagner²,

Zanatta³

2000

J. Electrochem. Soc.

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We report the growth and structural and optoelectronic properties of films of hydrogenated amorphous silicon (a‐Si:H) and microcrystalline silicon (μc‐Si:H). The films were grown by combining very high frequency (80 MHz) excitation of the glow discharge with the addition of dichlorosilane false(SiH2Cl2false) to the source gas of silane false(SiH4false) and hydrogen false(H2false) . While the transition from a‐Si:H to μc‐Si:H is achieved by H2 dilution, the film properties are affected by the addition of SiH2Cl2 . Adding SiH2Cl2 raises the H content of μc‐Si:H and reduces the electrical conductivity (at 300 K) by 2–6 orders of magnitude, in comparison to μc‐Si:H deposited from SiH4 and H2 alone. A most important result is the growth of thin‐film transistor quality μc‐Si:H at the relatively low substrate temperature of 230°C. © 2000 The Electrochemical Society. All rights reserved.

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Section: Discussionmentioning

confidence: 96%

mentioning

confidence: 99%

Effects of SiH[sub 2]Cl[sub 2] on the Deposition and Properties of Amorphous and Microcrystalline Silicon Fabricated from Very High Frequency Glow Discharges

Mulato¹,

Wagner²,

Zanatta³

2000

J. Electrochem. Soc.

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“…It is known that acquiring microcrystalline SiC alloy materials is more difficult than for hydrogenated amorphous silicon (a-Si:H). [24][25][26] For example, it is reported that the microcrystallinity is suppressed in glow discharge deposition of SiC:H. 24 This effect may be attributed to the additional disorder caused by alloying two elements ͑Si and C͒ with significantly different sizes.…”

Section: Introductionmentioning

confidence: 99%

Temperature effects in the hot wire chemical vapor deposition of amorphous hydrogenated silicon carbon alloy

Lee

Bent

2000

Journal of Applied Physics

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Structural and optical investigation of plasma deposited silicon carbon alloys: Insights on Si-C bond configuration using spectroscopic ellipsometry J. Appl. Phys. 97, 103504 (2005); 10.1063/1.1899758Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor depositionThe microstructure, composition, and bonding in hydrogenated amorphous silicon carbon alloy (a-SiC:H) films grown at different substrate temperatures were investigated by a combination of multiple internal reflection-Fourier transform infrared spectroscopy and near edge x-ray absorption fine structure measurements. Hot wire chemical vapor deposition ͑HW-CVD͒ was used to grow the thin films at substrate temperatures ranging from 200 to 600 K using mono-and trimethylsilane as precursors. It is found that raising the substrate temperature during HW-CVD leads to films depleted in the higher hydrides ͑namely SiH 3 , SiH 2 , and CH 3 ͒ in favor of the lower hydrides ͑SiH and CH͒. This change marks a transition of the film structure from a highly methylated-polysilane backbone to a polycarbosilane backbone. In addition, some crystalline characteristics appear with increasing substrate temperature, demonstrating that the change of substrate temperature affects both the hydrogen configuration and the microstructure of the film. Temperature-dependent growth of thin a-SiC:H films by HW-CVD is compared with the method of electron cyclotron resonance plasma-enhanced ͑PECVD͒.

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Ion beam deposition of crystallographically aligned nano-crystalline silicon films

Khan

Frey²

1996

Surface and Coatings Technology

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Transformation of microcrystalline state of hydrogenated silicon to amorphous one due to presence of more electronegative impurities

Cited by 14 publications

References 1 publication

Effects of SiH[sub 2]Cl[sub 2] on the Deposition and Properties of Amorphous and Microcrystalline Silicon Fabricated from Very High Frequency Glow Discharges

Effects of SiH[sub 2]Cl[sub 2] on the Deposition and Properties of Amorphous and Microcrystalline Silicon Fabricated from Very High Frequency Glow Discharges

Temperature effects in the hot wire chemical vapor deposition of amorphous hydrogenated silicon carbon alloy

Ion beam deposition of crystallographically aligned nano-crystalline silicon films

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