1996
DOI: 10.1016/0257-8972(95)02490-5
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Ion beam deposition of crystallographically aligned nano-crystalline silicon films

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Cited by 4 publications
(2 citation statements)
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“…The ion-beam-deposition (IBD) technique offers many advantages over other techniques. For example, the microstructure, texture epitaxy [85][86][87], and the adhesivity of the deposited films can be controlled by varying the energy of the ions or by ion-assisted IBD from solid targets or gaseous sources. A continuous deposi- tion at lower temperatures on flexible substrates, such as polymers as well as doping the films during deposition, is also possible.…”
Section: Nanoparticle Transparent and Electrically Conducting Zinc Oxmentioning
confidence: 99%
“…The ion-beam-deposition (IBD) technique offers many advantages over other techniques. For example, the microstructure, texture epitaxy [85][86][87], and the adhesivity of the deposited films can be controlled by varying the energy of the ions or by ion-assisted IBD from solid targets or gaseous sources. A continuous deposi- tion at lower temperatures on flexible substrates, such as polymers as well as doping the films during deposition, is also possible.…”
Section: Nanoparticle Transparent and Electrically Conducting Zinc Oxmentioning
confidence: 99%
“…In general, CVD [1,2] and Plasma Enhanced Chemical Vapour Deposition (PECVD) techniques [1,3,4] are used to deposit polycrystalline and amorphous silicon films, respectively. High quality films of silicon and of other materials can also be deposited using ion beam deposition technique [1,[4][5][6][7][8]. The grain size of the silicon films from nanocrystalline to polycrystalline is modified by annealing in vacuum or inert gas atmospheres or by surface annealing using lasers.…”
Section: Introductionmentioning
confidence: 99%