Transient absorption of copper selenide nanowires of different stoichiometry

Juška, Gediminas; Gulbinas, Vidmantas; Jagminas, Arūnas

doi:10.3952/lithjphys.50201

Cited by 12 publications

(6 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Copper chalcogenide thin films have numerous applications in various devices such as solar cells [6][7][8], photodetectors [9], optical filters [10], microwave shielding [11], thermoelectric converters [12]. Photovoltaic cells and Shottky diodes are associated with these metal chalcogenide compound [13,14].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of CuSe thin films - band gap determination

et al. 2017

View full text Add to dashboard Cite

Copper selenide thin films of three different thicknesses have been prepared by vacuum evaporation method on a glass substrate at room temperature. The optical properties of the films were investigated by UV-VIS-NIR spectroscopy and photoluminescence spectroscopy. Surface morphology was investigated by field-emission scanning electron microscopy. Copper selenide exhibits both direct and indirect transitions. The band gap for direct transition is found to be ~2.7 eV and that for indirect transition it is ~1.70 eV. Photoluminescence spectra of copper selenide thin films have also been analyzed, which show emission peaks at 530, 550, and 760 nm. The latter corresponds to indirect transition in investigated material.

show abstract

Section: Introductionmentioning

confidence: 99%

Optical properties of CuSe thin films - band gap determination

et al. 2017

View full text Add to dashboard Cite

show abstract

“…From the extrapolation of the linear region of (αhν) 2 versus hν we estimated an optical gap energy E g for FTO and Cu 2−X Se as 3.4 and 2.3 eV, respectively, consistent with the literature. [4,[9][10][11]24,[31][32][33][34] The bandgap for Cu 2−X Se is suitable for organic optoelectronic devices.…”

Section: Gap Energy and Surface Morphology Of Cu 2−x Se Filmsmentioning

confidence: 99%

Flexible and Transparent Electrodes of Cu₂₋_XSe with Charge Transport via Direct Tunneling Effect

Silva

Zanatta

Rabelo

et al. 2021

Adv Elect Materials

View full text Add to dashboard Cite

New generations of organic semiconducting devices have driven the search to replace the well-established indium-doped tin oxide (ITO) and fluorine-doped tin oxide (FTO) electrodes. [1,2] The requirements for alternative materials include a high electrical conductivity and possibility to prepare thin, transparent and flexible films with large areas at low cost. ITO is used as anode in organic light-emitting diodes (OLEDs) due to its transparency in the visible region and high conductivity (>10 3 S cm −1 ). However, the high Schottky barrier on ITO (or FTO) interfaces makes it difficult to inject charge carriers into the active semiconducting layer, especially because of its work function of ≈4.4 eV. [3] This problem can be mitigated by treating its surface to alter the working function or by inserting intermediate layers to change electron mobility and promote a better balance between the injected charge carriers. [4] Another possibility is to employ chalcogenide metals such as copper selenide that can exist in different compositions, namely stoichiometric Cu 2 Se, Cu 3 Se 2 , CuSe, and CuSe 2 and non-stoichiometric Cu 2−X Se. [5][6][7][8][9] The latter is a p-type semiconductor with an energy gap of ≈2.3 eV and work function of 4.17 eV, therefore promising as a hole-injecting electrode for OLEDs. [7,[9][10][11] Films of Cu 2−X Se can be prepared with vacuum evaporation, [12,13] cation-anion combination, [14][15][16] cation-anion combination in hot coordinating solvents, [17][18][19] element combination in the solid state, [20] galvanic synthesis, [21] chemical reduction from CuSe, [22] electrochemical methods, [23] and chemical bath deposition. [24][25][26] We demonstrate here that Cu 2−X Se films can function as electrodes for organic electronics. The films were synthesized from copper deposited from the vapor phase followed by chemical bath deposition. With polyester as substrate, the resulting films are flexible, thin and transparent. For comparison, devices with an FTO electrode are also discussed. Poly-[2-methoxy-5-(2ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) was used in a light-emitting inorganic-organic hybrid diode (IOHLED). The effectiveness of Cu 2−X Se as electrode was demonstrated in a comparison with a device containing an intermediate layer of poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) In this paper, it is demonstrated that copper selenide (Cu 2−X Se) films onto polyester sheets may serve as transparent electrodes in inorganic-organic hybrid light emission devices (IOHLED), as possible replacement to indium tin oxide or fluorine-doped tin oxide. The Cu 2−X Se film synthesized via bath chemical deposition is electrically stable with a sheet resistance of 148 Ω sq −1 and optical bandgap of 2.3 eV. IOHLED are made with poly(3,4ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an organic layer for hole transport and poly[2-metoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) as electroluminescent semiconductor. The IOHLED emits in the visible range owing to the simu...

show abstract

“…Кроме того, селенид меди(I), являясь полупроводником с проводимостью p-типа, имеет множество приложений в различных устройствах, таких как фотодетекторы [5], оптические фильтры [6,7], СВЧ экраны [8], термоэлектрические преобразователи [9,10], фотогальванические элементы и диоды Шоттки [11,12].…”

Section: Introductionunclassified

Тонкие Пленки Селенида Меди(I): Состав, Морфология, Структура, Оптические Свойства

Маскаева¹,

Федорова²,

Марков³

et al. 2018

Физика И Техника Полупроводников

View full text Add to dashboard Cite

The systematized results of studies of the composition, morphology, structure, optical properties, and conductivity of hydrochemically deposited copper(I) selenide thin films (Cu_1.8Se) with the thickness of 390–400 nm are reported. The studies are carried out using scanning electron microscopy, energy-dispersive analysis, X-ray diffraction analysis, and X-ray photoelectron spectroscopy. The hole conductivity of the layers is established by the thermopower technique. The optical band gap determined from the results of studies of optical absorbance and diffuse reflection spectra of the films at 298 K is 2.5 and 1.84 eV for direct and indirect optical transitions, respectively.

show abstract

Transient absorption of copper selenide nanowires of different stoichiometry

Cited by 12 publications

References 23 publications

Optical properties of CuSe thin films - band gap determination

Optical properties of CuSe thin films - band gap determination

Flexible and Transparent Electrodes of Cu₂₋_XSe with Charge Transport via Direct Tunneling Effect

Тонкие Пленки Селенида Меди(I): Состав, Морфология, Структура, Оптические Свойства

Contact Info

Product

Resources

About

Transient absorption of copper selenide nanowires of different stoichiometry

Cited by 12 publications

References 23 publications

Optical properties of CuSe thin films - band gap determination

Optical properties of CuSe thin films - band gap determination

Flexible and Transparent Electrodes of Cu2−XSe with Charge Transport via Direct Tunneling Effect

Тонкие Пленки Селенида Меди(I): Состав, Морфология, Структура, Оптические Свойства

Contact Info

Product

Resources

About

Flexible and Transparent Electrodes of Cu₂₋_XSe with Charge Transport via Direct Tunneling Effect