Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers

Abstract

The transient behaviour of intrinsic gettering (IG) is clarified for the first time on the silicon wafer with surface defects introduced by the prc-annealing in wet 0, a t 1140 "C. It is found that surface defects introduced by the pre-annealing in 0, at higher temperatures, which are speculated to be heavy metal clusters in this work, migrate to an inner region and are gettered by inner defects during the post-annealing at lower temperatures such as 950 "C. These results suggest that surface defects introduced by pre-oxidation process can be gettered during device heat treatment a t comparatively lower temperatures if microdefect nuclei are suitably given.Das nichtstationare Verhalten der Intrinsic-Getterung (IG) wird erstmalig geklilrt an Siliziumscheiben mit Oberflllchendefekten, die durch die Vortemperung in feuchtem 0, bei 1140 "C eingefuhrt werden. Es wird gefunden, &I3 Oberflachendefekte, die durch eineVortemperung in 0, bei hoheren Temperaturen eingefiihrt werden und von denen in dieser Arbeit angenommen wird, daB sie Schwermetallcluster sind, in cinen inneren Bereich wandern und durch innere Defekte wiihrend der Nachtemperung bei tieferen Temperaturen, wie etwa 950 "C gegettert werden. Diese Ergebnisse zcigen, d a B Oberflachendefekte, die durch einen Vor-OxydationsprozeB erzeugt werden, wahrend einer Wilrmebehandlung bei vcrglcichsweise niedrigcren Temperaturen gegettert werden konnen, wenn geeignete Mikrodefektkeime gebildet werden. 1) 1-1, Miyazaki, Miyamae-ku, Kawasaki 213, Japan. 2) Present address: Monsanto Co., 800N Lindbergh Blvd. St. Louis, Mo. 63167.

The friction of CVD diamond at high Hertzian stresses: the effect of load, environment and sliding velocity

“…The suggestion that graphitization occurs during sliding and that this has a lubricating effect would explain the very low friction coefficients measured at low load and sliding velocity. Similarly low friction coefficients were obtained by Tsuya and Kitamura (1974), Tsuya and Shimura (1974), and later by Martin et al (1993) for sliding on molybdenum disulphide, and the lubricating effect of this material was explained in terms of its layered structure. For molybdenum disulphide, friction is lowest under ultrahigh-vacuum (UHV) conditions and increases in air and water, whereas for graphite this situation is reversed (see, for example, Singer 1998).…”

Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons

“…The shape of the distribution is essentially independent of the assumed values. The initial defect density distribution is usually characterized as a normal distribution, because the defects are randomly introduced by unexpected process [7]. However the initial defect density distribution obtained here is quite different from the normal distribution.…”

Very low friction for natural diamond in water of different pH values

“…The extremely low resistance to sliding of the basal planes in graphite can thus explain the high reductions in the friction coefficient that has been observed. This hypothesis is further supported by the fact that the only other similarly low friction coefficient have been obtained for molybdenum disulphide [24,25], and were explained in terms of its layered structure. Water vapour and oxygen have been shown to have a lubricating effect on sp 2 carbon materials [26], thus accounting for the effect of the environment.…”