Transient capacitance measurement of MEM capacitor

Nieminen, H.; Hyyryläinen, Jari; Veijola, Timo; Ryhänen, Tapani; Ermolov, Vladimir

doi:10.1016/j.sna.2004.06.023

Cited by 17 publications

(8 citation statements)

References 11 publications

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“…With the RF setup, capacitances are measured with a discrete single-frequency 1-port -parameter measurement system based on the description given by Nieminen et al [9] which is schematically depicted in Fig. 8.…”

Section: A Setups and Measurement Methodsmentioning

confidence: 99%

Center-Shift Method for the Characterization of Dielectric Charging in RF MEMS Capacitive Switches

Herfst

Steeneken

Huizing

et al. 2008

IEEE Trans. Semicond. Manufact.

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Abstract-Radio frequency (RF) micro-electro-mechanical systems (MEMS) capacitive switches show great promise for use in wireless communication devices such as mobile phones, but for the successful application of these switches their reliability needs to be demonstrated. One of the main factors that limits the reliability is charge injection in the dielectric layer (SiN) which can cause irreversible stiction of the moving part of the switch.We present a way to characterize charge injection. By stressing the dielectric with electric fields on the order of 1 MV/cm, we inject charge in the dielectric and measure the effects it has on the curve. Instead of conventionally measuring the change of the pull-in voltage, the presented center shift method measures the change of the voltage at which the capacitance is minimal. This way, the measurement method does not influence the charge injected by the stress voltage. Another advantage is that the measurement of the amount of injected charge is not influenced by changes in the width of the curve. These two advantages make it possible to test RF-MEMS capacitive switches in a more accurate way.

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Section: A Setups and Measurement Methodsmentioning

confidence: 99%

Center-Shift Method for the Characterization of Dielectric Charging in RF MEMS Capacitive Switches

Herfst

Steeneken

Huizing

et al. 2008

IEEE Trans. Semicond. Manufact.

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“…The system is based on the description given by Nieminen et al [6], and is schematically depicted in Fig. 1.…”

Section: Hardwarementioning

confidence: 99%

“…It is based on work by Nieminen et al [6]. In this paper we analyze the measurement accuracy and show how it can be greatly improved by a good selection of hardware and by introducing a new calibration technique with which the significant nonlinearities of the used components can be corrected.…”

Section: Introductionmentioning

confidence: 98%

Fast RF-CV Characterization Through High-Speed 1-port S-Parameter Measurements

Herfst

Steeneken

Tiggelman

et al. 2012

IEEE Trans. Semicond. Manufact.

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SummaryWe present a novel, fast, and cost-effective method to measure the capacitance-voltage relation of an electronic device. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. A new way is introduced to correct for non-linearities of the used components. C-V curves are measured in less than a millisecond, with measurement accuracy well below 1%. The technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor.Fast RF-CV Characterization Through High-Speed 1-port S-parameter Measurements Abstract-We present a novel method to measure the capacitancevoltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.

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“…Another possibility is to use the method used by Nieminen et al [37]. Based on their description, a custom single frequency 1-port S-parameter setup was made that can accurately measure transient behavior.…”

Section: Fast Rf 1-port S-parameter Setupmentioning

confidence: 99%

“…It is based on the description given by Nieminen et al [37], and is schematically depicted in Fig. 2.7.…”

Section: Hardwarementioning

confidence: 99%