Transient characteristics of n-channel hybrid Schottky injection FETs

Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor

“…If the Schottky contact is directly on the n À -drift or the n-buffer, this too much suppresses the hole injection from the p þinjector, and forces a high forward voltage as reported in ref. 4. The conductivity modulation can be precisely tuned by the area ratio only if the Schottky contact is placed on the lightly doped p-layer.…”

“…1,2) In order to miniaturize the system, high frequency operation of LIGBTs has been strongly demanded. Nakagawa et al developed silicon on insulator (SOI)-LIGBTs with lightly doped p-layer collector layers, achieving the fall-time, t F , of 300 ns, the on-state voltage, V ON , of 3.0 V at 120 A/cm 2 , and the breakdown voltage, BV CES , of 500 V. 2,3) Kaneko et al developed junction-isolated hybrid IGBTs, employing an anode-short structure and the lifetime control process of electron irradiation, resulting in t OFF of 110 ns, V ON of 5.5 V at 68 A/cm 2 , and BV CES of 800 V. 1) Sin et al developed hybrid Schottky injection field effect transistor (HSINFET), where the anode consists of a p þ emitter and a Schottky contact on the n-drift, resulting in t OFF of 50 ns, the on-resistance, R ON , of 7 , and BV CES of 130 V. 4) Trajkovic et al developed LIGBTs with the unique membrane structure, resulting in t OFF of 60 ns, V ON of 4 V at 150 A/cm 2 , and BV CES of 800 V. 5,6) They selectively removed the portions of the silicon substrate under the high voltage SOI devices. The structure is suitable for a high breakdown voltage, but has a disadvantage of a high thermal resistance because of its unique substrate structure.…”