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We have successfully developed the record high blocking voltage of 750 V and the largest current capability of 4.5 A silicon-on-insulator (SOI) micro-inverter IC, which is made possible by the newly developed high voltage reliability technology and high-speed and low-dissipation extraction enhanced lateral insulated gate bipolar transistor (E2LIGBT). It has been found, for the first time, that the stable and reliable high blocking voltage of 760 V is assured by controlling the sheet-resistance of the polycrystalline silicon (poly-Si) layer of the scroll-shaped resistive field plate (SRFP). The high voltage and high reliability SOI power IC technology is expected as the key technology enabling 750 V 4.5 A micro-inverter IC for harsh applications such as automotive electronics.

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