Extraction enhanced lateral IGBT (E&lt;sup&gt;2&lt;/sup&gt; LIGBT) : A super high speed LIGBT superior to LDMOS

Ashida, Youichi; Takahashi, Shigeki; Shiraki, Susumu; Tokura, Norihito; Nakagawa, Akio

doi:10.7567/ssdm.2011.l-8-2

Cited by 2 publications

(2 citation statements)

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“…We have developed and re-optimized the high speed E 2 LIGBT for the high current 4.5 A micro-inverter application. 8) Figure 9 shows measured electrical characteristics of the high current E 2 LIGBT. In Figs.…”

Section: High-speed and Low-dissipation E 2 Ligbtmentioning

confidence: 99%

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High Voltage and High Reliability Silicon-on-Insulator Power IC Technologies and Their Application to 750 V 4.5 A Micro-Inverter IC

Shiraki¹,

Takahashi²,

Yamada³

et al. 2012

Jpn. J. Appl. Phys.

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We have successfully developed the record high blocking voltage of 750 V and the largest current capability of 4.5 A silicon-on-insulator (SOI) micro-inverter IC, which is made possible by the newly developed high voltage reliability technology and high-speed and low-dissipation extraction enhanced lateral insulated gate bipolar transistor (E2LIGBT). It has been found, for the first time, that the stable and reliable high blocking voltage of 760 V is assured by controlling the sheet-resistance of the polycrystalline silicon (poly-Si) layer of the scroll-shaped resistive field plate (SRFP). The high voltage and high reliability SOI power IC technology is expected as the key technology enabling 750 V 4.5 A micro-inverter IC for harsh applications such as automotive electronics.

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Section: High-speed and Low-dissipation E 2 Ligbtmentioning

confidence: 99%

“…We have successfully developed the record high BV of 750 V and the largest current capability of 4.5 A SOI micro-inverter IC, which is made possible by the newly developed high voltage reliability technology and high-speed and lowdissipation extraction enhanced LIGBT (E 2 LIGBT) 8) based on reproducible device design and process sequence.…”

Section: Introductionmentioning

confidence: 99%