High Voltage and High Reliability Silicon-on-Insulator Power IC Technologies and Their Application to 750 V 4.5 A Micro-Inverter IC

Shiraki, Susumu; Takahashi, Shigeki; Yamada, Akira; Yamamoto, Masahiro; Senda, Koji; Ashida, Youichi; Hiruma, Atsuyuki; Tokura, Norihito

doi:10.1143/jjap.51.04dp03

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…The original value for the switch-off energy of about 24 µJ is reduced to 1.5 µJ. The achievable switch off energy per area of about 3 µJ/mm² is tremendously lower then recently reported for lateral IGBTs integrated in SOI technologies [5].…”

Section: IVmentioning

confidence: 67%

Trench isolated thick SOI process for various optical and high voltage devices

Lerner

Gaebler

Schottmann

et al. 2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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By using a trench isolated thick SOI process as base topology various optical and high voltage devices can be designed which are not or hardly possible in pnjunction isolated BCD processes. The trench isolation allows the construction of isolated photodiodes with excellent response even for red and infrared wavelengths. The thick SOI material enables the integration of vertical high voltage devices like NPN bipolar transistors. Together with a special collector design the buried layer and the sinker allow the integration of an IGBT device which is tune able between on-state and switching performance. Keywords-HV transistor, photo diode, Trench, thick SOI I.MOTIVATION A trench isolated thick Silicon-On-Insulator (SOI) technology [1] allows not only the easy high side and/or below ground operation of logic blocks and high voltage transistors, a further benefit is the possibility to integrate various optical and high voltage devices. Target of this work was to integrate new functionalities into the existing 650 V technology with a minimum of additional processing effort and a minimum of extra mask layers respectively. The dielectric isolation allows the integration of minority carrier injecting IGBT devices [2], [3], without any risk to inject carriers deeply into a common substrate. Also carriers generated by longer wavelengths in photodiodes deep in the silicon are confined and cross talk problems are reduced. Stacking of photodiodes is a further possibility that is made possible by the dielectric isolation. For integrated vertical devices the thick SOI layer allows breakdown voltages above 700 V. An example is a new vertical NPN transistor which was designed using existing design and process elements. II.STARTING POINT A trench isolated Bipolar-CMOS-DMOS (BCD) process on 55 µm SOI wafers containing 5, 7 and 20 V logic CMOS transistors, medium and high voltage n-channel DMOS and PMOS transistors as well as bipolar and other analogue devices like resistors and capacitors was the base for the development of new devices. Isolation, SOI thickness as well as doping concentrations are sufficient to achieve typical breakdown voltages above 700 V. Figure 1 schematically shows the dielectric isolation topology, consisting of the trench, the trench adjacent doping layer (sinker), the Buried OXide (BOX) and the highly doped buried layer above the BOX, together with the standard high voltage device, a 650 V n-channel quasi-vertical DMOS transistor. A pwell to n-device wafer (the upper wafer of the SOI wafer stack) junction diode in an isolated tub together with the sinker and buried layer dopings were used to build isolated photodiodes. A similar vertical construction as shown in Figure 1 was used to design a vertical NPN bipolar transistor. The pwell to n-device wafer junction allows blocking voltages above 700 V. To achieve such blocking voltages the drift region construction, slightly modified field plate structures and geometrical radii were reused in a slightly modified layout from the original high voltage DMOS.The high...

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Section: IVmentioning

confidence: 67%

Trench isolated thick SOI process for various optical and high voltage devices

Lerner

Gaebler

Schottmann

et al. 2013

2013 International Semiconductor Conference Dresden - Grenoble (ISCDG)

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“…Apart from the increasing level of integration in digital and lowpower (IoT) applications during the last decades, a similar trend is observed in power systems [1], [2]. A huge benefit emerges when a complete power system, consisting of control logic, signal processing and power stages, can be integrated in a System in a Package (SiP) [3] or even a single-chip System-on-Chip (SoC).…”

Section: Introductionmentioning

confidence: 84%

A 650 V, 3 A three-phase fully-integrated BLDC motor driver with charge pump and level shifters

Smedt¹,

Thoné²,

Wens³

2016

ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference

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A 650 V three-phase IGBT motor driver is presented in this article. Apart from the power transistors and predrivers, also freewheeling diodes are present in the output power stage to drive inductive loads. The 15 V overdrive voltage as well as all other floating supplies are generated on-chip by means of a charge pump and cascoded current mirrors. The input signals for all switches are at ground level and level-shifted internally. Each half-bridge is able to switch at 20 kHz a 1.5 A current at 600 V and a 3 A current at 300 V. The ground connection contains a current shunt and a sense-amplifier, which can be used as a feedback signal in the BLDC control loop. The system is implemented in a 1 µm SoI technology with 650 V IGBT transistors.

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On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

Okamoto

Ryoson

Fujimoto

et al. 2020

J. Microelectromech. Syst.

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The rapid development of microfluidic technology has increased the demand for the integration of driving circuits in the microfluidic devices. We have proposed a novel on-chip electroosmotic (EOF) micropump integrated with a high-voltage (HV) generator. The HV (49.8 V) generator is based on a Dickson charge pump, which is fabricated on a silicon-on-insulator (SOI) substrate by the standard CMOS process, and the isolation is achieved by MEMS post-processed deep trench isolation. The size of the 49.8 V generator is 425×353 µ m 2 . The HV required for the successful operation of the micropump was generated by the integrated driving circuit with a low-voltage power supply. The maximum flow velocity and flow rate of the proposed EOF micropump were measured as 137 µ m/s and 167 nL/min, respectively when it was driven by the integrated 49.8 V generator. The efficiency of the micropump is demonstrated by comparing it with the previously reported micropumps. The proposed integration technique is reliable and effective, and potentially boosts the practical applications of lab-on-chip devices.

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High Voltage and High Reliability Silicon-on-Insulator Power IC Technologies and Their Application to 750 V 4.5 A Micro-Inverter IC

Cited by 6 publications

References 8 publications

Trench isolated thick SOI process for various optical and high voltage devices

Trench isolated thick SOI process for various optical and high voltage devices

A 650 V, 3 A three-phase fully-integrated BLDC motor driver with charge pump and level shifters

On-Chip CMOS-MEMS-Based Electroosmotic Flow Micropump Integrated With High-Voltage Generator

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