To understand the electronic processes
in quantum-dot light-emitting
diodes (QLEDs), a comparative study was performed by time-resolved
transient electroluminescence (TREL). We fabricated red, green, and
blue (R-, G-, and B-) QLEDs with poly(9,9-dioctylfluorene-co-N-(4-sec-butylphenyl)diphenylamine)
as the hole-transporting layer with conventional structures. The external
quantum efficiency (EQE) and current efficiency were 19.2% and 22.7
cd A–1 for R-QLEDs, 21.1% and 93.3 cd A–1 for G-QLEDs, and 10.6% and 10.4 cd A–1 for B-QLEDs,
respectively. The TREL results for B-QLEDs were remarkably different
from those for R- and G-QLEDs because of the insufficient electron
injection crossing the type II heterojunction between the emission
layer and the electron-transporting layer. We further applied poly(N-vinylcarbazole) as the hole-transporting layer and obtained
much better performance for B-QLEDs, with EQE and current efficiency
of 15.9% and 15.4 cd A–1, respectively. Concomitant
with the increase in EQE are an increase in the turn-on voltage from
2.3 to 3.7 V and a transient electroluminescence spike after voltage
turn-off.