Transient high-field electrical conduction in evaporated thin potassium iodide films

Abstract

Transient high-field electrical conduction in evaporated thin potassium iodide films has been studied as a function of the applied voltage at room temperature, covering a time range from microseconds to several hours. The results show that the universal dielectric response is valid separately in three regions. The electrical conduction is achieved through the hopping mechanism. The transition probability, associated with the hopping mechanism in each region, is affected differently by the applied voltage.

Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz–1 MHz

“…The measurements of transient conductivity were performed at room temperature, from 1 to 100 s after the application of voltage in the voltage region from 1.0-20.0 V in accumulation (c-Si is connected to the positive output of the power supply). A detailed description of the experimental setup for the transient measurements can be found elsewhere [10]. Figure 2 presents the dielectric constant ε΄ versus f at room temperature, for the samples with 20, 40 and 72 nm thick oxide on a 10 μm thick MacroPS.…”

A study on the AC and transient electrical conduction in evaporated thin potassium iodide films

“…The experimental details regarding the preparation of the MIM sandwiches by thermal evaporation, in which aluminium has been used for the electrodes, have been described in detail by Georga and Pisanias (1983). Furthermore, it should be pointed out that the contacts A1-KI-A1 are blocking contacts (Simmons 1971) since the work function of aluminium is 4.18 eV (Hubber and Kirk 1966) and is greater than that of KI, which is 3.7 eV (Poole et al 1975).…”

“…It is valid in three separate time intervals with different values of a and m in each interval. Figure 1 shows the voltage dependence of the charging current at different instants and table 1 gives the voltage dependence of the exponent m in each of the three time intervals as reported by Georga and Pisanias (1983). Figure 1 suggests that there is no linearity between the observed current and the applied voltage.…”

“…The transient high-field electrical conduction in evaporated thin potassium iodide (KI) films at room temperature has been reported by Georga and Pisanias (1983). The main feature of their work is that for different applied step voltages the charging current follows a power law (Jonscher 1977, 1980, 1983, Ngai and White 1979, Scher and Montroll 1975, Sutter and Nowick 1963 and it is expressed in the time domain through the relation I = at-m (1) where a and m are constants. It is valid in three separate time intervals with different values of a and m in each interval.…”

Transient and AC electrical conductivity of porous silicon thin films

“…The AC electrical conductivity measurements were performed in the frequency range 1 Hz to 1 MHz in the voltage varied from 0.5 V to 3.0 V using the SOLARTRON SI 1260 impedance/gain phase analyzer in steps of 0.5 V. The measurements of transient conductivity were performed from 5 × 10 -5 s to 10 1 s for applied voltages in the range of 1.0 -9.0 V in steps of 1.0 V from a Systron-Donner pulse generator and recording the transient response of the current with a HAMEG 1007 storage oscilloscope. Detailed description of the experimental setup for the transient measurements can be found in reference[13].…”