Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

Abstract

The transient response of the lateral photovoltaic effect (LPE) was observed when Ti-SiO 2 -Si structure was irradiated by a 650 nm laser at room temperature. The lateral photovoltage (LPV) was measured by voltmeter, which is linearly dependent on the laser irradiation position. In this paper, we described the dynamic process of LPE when Ti-SiO 2 -Si was irradiated by laser. The LPE has high sensitivity of 59mV/mm and linearity of 0.9924, respectively. Furthermore, the experimental phenomenon is explained by the carrier diffusion theory. And a resistor-capacitor (RC) circuits model combines with traditional LPE is established to simulate the transient response. These results suggest that the Ti-SiO 2 -Si structure is a potential choice for optoelectronic devices applied in the sensors eld.