Geometry structure, electronic structure and electronic transport properties of saturated hexagonal single crystalline GaN nanowires in the [001] growth direction have been investigated based on generalized gradient approximation (GGA) of density functional theory (DFT) and non-equilibrium green's function (NEGF) method. The results show, there is a contraction of the bond lengths of the saturated GaN nanowires after optimization; the nanowires have direct band gap, and band gap decreases with the increase of the cross section of nanowires; the electronic density of state and electronic transmission spectra of two-probe system have their own pulse-type sharp peaks with almost the same location of electron energy; the curves of I-V characteristics of the three saturated GaN nanowires are symmetric over the entire bias-voltage range, and they are semiconducting.

The transient response of the lateral photovoltaic effect (LPE) was observed when Ti-SiO2-Si structure was irradiated by a 650 nm laser at room temperature. The lateral photovoltage (LPV) was measured by voltmeter, which is linearly dependent on the laser irradiation position. In this paper, we described the dynamic process of LPE when Ti-SiO2-Si was irradiated by laser. The LPE has high sensitivity of 59mV/mm and linearity of 0.9924, respectively. Furthermore, the experimental phenomenon is explained by the carrier diffusion theory. And a resistor-capacitor (RC) circuits model combines with traditional LPE is established to simulate the transient response. These results suggest that the Ti-SiO2-Si structure is a potential choice for optoelectronic devices applied in the sensors field.

The transient response of the lateral photovoltaic effect (LPE) was observed when Ti-SiO 2 -Si structure was irradiated by a 650 nm laser at room temperature. The lateral photovoltage (LPV) was measured by voltmeter, which is linearly dependent on the laser irradiation position. In this paper, we described the dynamic process of LPE when Ti-SiO 2 -Si was irradiated by laser. The LPE has high sensitivity of 59mV/mm and linearity of 0.9924, respectively. Furthermore, the experimental phenomenon is explained by the carrier diffusion theory. And a resistor-capacitor (RC) circuits model combines with traditional LPE is established to simulate the transient response. These results suggest that the Ti-SiO 2 -Si structure is a potential choice for optoelectronic devices applied in the sensors eld.

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