Transient simulation of heterojunction photodiodes-part I: computational methods

Leblebici, Yusuf; Ünlü, M. Selim; Kang, Sung‐Mo; Onat, Bora M.

doi:10.1109/50.376717

Cited by 19 publications

(4 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This problem can be solved by means of the improvement of the discretization scheme for differential equations. The application of the Scharfetter-Gummel approximation is a traditional approach to the problem solution [44,45].…”

Section: Models and Simulation Methodsmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

View full text Add to dashboard Cite

Abstract:In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the A III B V nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results' adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction.

show abstract

Section: Models and Simulation Methodsmentioning

confidence: 99%

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Pisarenko

Ryndin

2016

Electronics

View full text Add to dashboard Cite

show abstract

“…On the other hand, in order to provide the semiconductor-device simulation an effective development circumstance, we used the equivalent-circuit method to simplify the programming. The Poisson and continuity equations which control the behaviour of charge carriers inside a semiconductor device are formulated into equivalent circuit, so that circuit elements such as voltage sources, resistors and capacitors can be used to implement the device equations [1]. The device is converted to an equivalent circuit, which makes the device simulation problem become a circuit analysis problem and allows simultaneous solution of an electrical network containing both external circuit elements and 3-D numerical device models.…”

Section: Introductionmentioning

confidence: 99%

Development of 3‐D equivalent‐circuit modelling with decoupled L‐ILU factorization in semiconductor‐device simulation

Dai

Chang

et al. 2007

Int J Numerical Modelling

View full text Add to dashboard Cite

SUMMARYIn this paper, we develop a three-dimensional (3-D) device simulator, which combines a simplified, decoupled Gummel-like method equivalent-circuit model (DM) with levelized incomplete LU (L-ILU) factorization. These complementary techniques are successfully combined to yield an efficient and robust method for semiconductor-device simulation. The memory requirements are reduced significantly compared to the conventionally used Newton-like method. Furthermore, the complex voltage-controlled current source (VCCS) is simplified as a nonlinear resistor. Hence, the programming and debugging for the nonlinear resistor model is much easier than that for the VCCS model. Further, we create a connectiontable to arrange the scattered non-zero fill-ins in sparse matrix to increase the efficiency of L-ILU factorization. Low memory requirements may pave the way for the widespread application in 3-D semiconductor-device simulation. We use the body-tied silicon-on-insulator MOSFET structure to illustrate the capability and the efficiency of the 3-D DM equivalent-circuit model with L-ILU factorization.

show abstract

“…(2) The time RC arising from junction capacitance C and load resistance R. (3) The diffusion time diff of carriers generated in n + and/or p + region.…”

Section: Introductionmentioning

confidence: 99%

High frequency response of p-i-n photodiodes analyzed by an analytical model in Fourier space

Konno

Matsushima

Navarro

et al. 2004

Journal of Applied Physics

View full text Add to dashboard Cite

A formulation of carrier transport in vertical p-i-n photodiodes is presented in Fourier space, taking into account diffusion effects of carriers outside the intrinsic region. High frequency response of photodiodes is investigated using the model. Calculated results show that diffusion limits the cutoff frequency characteristics of photodiodes with short intrinsic region length. Photocurrent calculations via the spectral method are in excellent agreement with two-dimensional device simulator results. The model can be utilized in circuit simulation because of its reduced computational runtime. ©

show abstract

Transient simulation of heterojunction photodiodes-part I: computational methods

Cited by 19 publications

References 14 publications

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Development of 3‐D equivalent‐circuit modelling with decoupled L‐ILU factorization in semiconductor‐device simulation

High frequency response of p-i-n photodiodes analyzed by an analytical model in Fourier space

Contact Info

Product

Resources

About