Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon

Kuzmı́k, J.; Bychikhin, S.; Neuburger, Martin; Dadgar, A.; Krost, A.; Kohn, E.; Pogány, D.

doi:10.1109/ted.2005.852172

Cited by 80 publications

(61 citation statements)

References 29 publications

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“…This additional photo-induced current can cause a significant additional device heating, which often dominates even the direct laser heating induced temperature rise [22]. Reflectivity changes can also be used to optically probe the device temperature, either considering only the change in reflectivity [23,24], or additionally by measuring the phase shift of the reflected light [25,26]. Calibration of the thermoreflectance coefficient can be challenging as the change in reflectivity with temperature is often small, however it is possible by performing careful measurements of specially prepared samples [27].…”

Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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This is the author accepted manuscript (AAM). The final published version (version of record) is available online via IEEE at http://ieeexplore.ieee.org/document/7590091. Please refer to any applicable terms of use of the publisher. University of Bristol -Explore Bristol Research General rightsThis document is made available in accordance with publisher policies. Please cite only the published version using the reference above. Full terms of use are available: http://www.bristol.ac.uk/pure/about/ebr-termsAbstract-We review the Raman thermography technique, which has been developed to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution. This is critical for the qualification of device technology, including for accelerated lifetime reliability testing and device design optimization. Its practical use is illustrated for GaN and GaAs based high electron mobility transistors, and opto-electronic devices. We also discuss how Raman thermography is used to validate device thermal models, as well as determining the thermal conductivity of materials relevant for electronic and opto-electronic devices.

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Section: Techniquesmentioning

confidence: 99%

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Kuball

Pomeroy

2016

IEEE Trans. Device Mater. Relib.

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“…However, the very high dissipated power densities present in GaN-based discrete transistors and monolithic microwave integrated circuits (MMICs) often result in elevated channel temperatures, which need to be accurately characterized and managed to ensure proper device performance and reliability. The most popular experimental temperature measurement techniques for this technology include micro-Raman thermometry [3]- [12], thermoreflectance microscopy [5], [13]- [14], and electrical parameter-based thermometry [15]- [17].…”

Section: Introductionmentioning

confidence: 99%

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Bagnall

Saadat

Joglekar

et al. 2017

IEEE Trans. Electron Devices

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“…While temperature, stress, and strain profiles have been extensively studied using numerical multi-physics coupled simulations [6,[18][19][20] and experimentally during DC electrical testing [4,21], few have studied the transient stress development even though these devices have numerous applications in the RF regime. Of those that have studied the transient response of AlGaN/GaN HEMTs, their focus was primarily on either electrical or thermal performance [12,22,23]. Ref.…”

Section: Introductionmentioning

confidence: 99%

Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

Jones

Heller

Dorsey

et al. 2015

Microelectronics Reliability

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a b s t r a c tIn this paper, we present finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT). The modeling technique involves a small-scale electro-thermal model coupled to a large-scale mechanics model to determine the resulting stress distribution within a device operated under radio frequency (RF) conditions. The electrical characteristics of the modeled device were compared to experimental measurements and existing simulation data from literature for validation. The results show critical regions around the gate Schottky contact undergo drastically different transient stresses during pulsed operation. Specifically, stress profiles within the AlGaN layer around the gate foot print (GFP) undergo highly tensile electrothermal stresses while stresses within the AlGaN outside the gate connected field plate (GCFP) towards the drain contact undergo highly tensile electrical stress and compressive thermoelastic stress. It is shown AlGaN/GaN HEMTs undergo large amounts of cyclic loading during typical transient operation. Based on these findings, transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.

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Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon

Cited by 80 publications

References 29 publications

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

Experimental Characterization of the Thermal Time Constants of GaN HEMTs Via Micro-Raman Thermometry

Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

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