2008 IEEE/ACS International Conference on Computer Systems and Applications 2008
DOI: 10.1109/aiccsa.2008.4493516
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Transistor-level based defect tolerance for reliable nanoelectronics

Abstract: Nanodevices based circuit design will be based on the acceptance that a high percentage of devices in the design will be defective. In this work, we investigate a defect tolerant technique that adds redundancy at the transistor level and provides built-in immunity to permanent defects (stuck-open, stuck-short and bridges). The proposed technique is based on replacing each transistor by quaddedtransistor structure that guarantees defect tolerance of all single defects and a large number of multiple defects as v… Show more

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Cited by 8 publications
(4 citation statements)
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“…The quadded‐transistor (QT) technique is proved to be more efficient than QL method in terms of area and reliability [10]. In QT, four transistors replace a single transistor and because of proper ordering arrangement of the transistors, QT is capable of handling any single defect.…”
Section: Limitations Of the Existing Sr Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The quadded‐transistor (QT) technique is proved to be more efficient than QL method in terms of area and reliability [10]. In QT, four transistors replace a single transistor and because of proper ordering arrangement of the transistors, QT is capable of handling any single defect.…”
Section: Limitations Of the Existing Sr Methodsmentioning
confidence: 99%
“…Static techniques, also called as defect tolerant methods, are robust, non‐adaptive in nature and effectively mask both permanent and transient types of faults. All modules including the redundant spares are active and powered on simultaneously in case of static approaches [1–15] whereas in dynamic recovery technique (also known as defect avoidance method), spare modules are activated only upon identification of failure of currently active modules, but the approach cannot recover from transient defects if not identified upon testing [16–19].…”
Section: Introductionmentioning
confidence: 99%
“…As a generalisation, this work considers two types of transistor fault: conducting and insulating. These are commonly used in similar literature, being called stuck-closed and stuck open defects amongst other things [7].…”
Section: A Fault Injectionmentioning
confidence: 99%
“…Device (transistor) level redundancy schemes have been proposed since the 1990s [16–19], including threshold logic gates [20–28], extrapolating quadded logic [29] to the device level [30–32], as well as for nanotechnologies [33–38]. All of these are alternative approaches to gate and circuit/system level redundancy schemes, and aim to achieve reliable computation by improving on the switching error probabilities of the devices (transistors) and enhancing gates’ noise immunities and their tolerance to variations.…”
Section: Introductionmentioning
confidence: 99%