Transistor noise parameter extraction using a 50 Omega measurement system

Abstract

A "50 Q" noise figure measurement system has been integrated into a fully automated s-parameter measurement system allowing for fast determination of transistor noise parameters as well as s-parameters, as a function of both frequency and bias. This functionality from such a simple measurement system is achieved using a new analysis technique, based on the "Noise Temperature Model" [l], that allows, after s-parameter measurements and analysis, for the direct extraction of all four transistor noise parameters from a single noise figure measurement. INTRODUCTIONThe determination of the transistor noise parameters (e.g.

Microwave noise modeling of FinFETs

“…Consequently, several studies have been addressed to overcome these drawbacks by extracting the noise parameters from the measurements of the NF 50 , which represents the noise figure with a 50 X source impedance, without the need of any tuner [4][5][6][7][8]. In particular, the determination of the noise parameters has been simplified by exploiting the noise model based on expanding the small signal equivalent circuit with two equivalent noise temperatures, which are associated to the intrinsic input and output resistances [5,9]. Furthermore, Felgentreff et al have presented a resistor noise model taking into account also the equivalent noise temperature associated to the feedback resistance [8,[10][11][12].…”

RF and noise performance of double gate and single gate SOI

“…As the drain temperature is higher than the gate temperature, and the noise temperature for HEMTs is about 2-3 times the ambient temperature, only one parameter (drain temperature) is needed for compact noise modelling. This model is also known as Pospieszalski [45] model or temperature model [46]. Fig.…”

A method for the determination of a distributed FET noise model based on matched‐source noise‐figure measurements

“…(7) is solved by least squares using pseudo-inverse calculation. The computed coefficients are used as initial values in an optimization algorithm that estimates C ij 0 and C ij 1 for the best fit of the computed F 50 , from expression (7)- (11) to the measured noise figure in expression (12), using a robust Huber error function to discard "outliers." It is found that coefficients C 22 0 and C 22 1 produce the highest sensitivity in the transistor-noise parameters.…”

“…As an application of the method proposed to extract a distributed noise model from noise-figure measurements, a simplified model for the intrinsic-noise correlation C int is considered as a particular case. The noise-temperature model [7,12] is a simplified (uncorrelated) model for an elemental section, where the following assumptions are made: the noise-source gate temperature is close to the room temperature T a (then C 11 int Ϸ 4 ⅐ k ⅐ T a ⅐ R i ), and no correlation is assumed between the noise sources (C 12 int ϭ C 21 int ϭ 0). Then, at every frequency point there is only one nearly frequency-independent parameter, C 22 int , that can be obtained from the drain temperature T d using Eq.…”

“…The distributed model is based in the so-called sliced model [6,10,11]. As a particular case, the uncorrelated "noise temperature" model [12] is also determined by using the proposed method. Experimental results of the measured distributed noise sources of a PHEMT and its noise parameters up to 40 GHz are presented.…”