A "50 Q" noise figure measurement system has been integrated into a fully automated s-parameter measurement system allowing for fast determination of transistor noise parameters as well as s-parameters, as a function of both frequency and bias. This functionality from such a simple measurement system is achieved using a new analysis technique, based on the "Noise Temperature Model" [l], that allows, after s-parameter measurements and analysis, for the direct extraction of all four transistor noise parameters from a single noise figure measurement. INTRODUCTIONThe determination of the transistor noise parameters (e.g.

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A 70 nm gate length metamorphic HEMT technology will be presented. Exkinsic cut-off frequencies of fl= 293 GHz and f , , = 337 GHz were achieved. The transistors have an on-state breakdown voltage of 1.7V. A median time to failure of 1x106 h at 125°C and an activation energy of 1.3eV was extrapolated based on a 10 % gdegradation in air. This is significant less than the 1.8 eV activation energy of our 100 nm gate-length 65 % In process which is probably due to hot electron effects. The MMIC-process obtains high yields on transistor and circuit level. Low-noise amplifiers demonstrate a small signal gain of 13 dB and a noise figure of 2.8 dB at 94 GHz. The achieved results are comparable to state-of-the-art InP-based HEMT technologies.

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