70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

Leuther, A.; Tessmann, A.; Dammann, M.; Reinert, W.; Schlechtweg, M.; Mikulla, M.; Walther, M.; Weimann, G.

doi:10.1109/iciprm.2003.1205352

Cited by 40 publications

(13 citation statements)

References 6 publications

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“…At the Fraunhofer IAF, metamorphic HIEMT layers are grown on 4-inch semi-insulating GaAs wafers by molecular beam epitaxy (MBE). The IC process features high yield on both transistor and circuit levels [3].…”

Section: Millimeter-wave Integratedmentioning

confidence: 99%

From 100 GHz to Terahertz Electronics - Activities in Europe

Schlechtweg

Tessmann

2006

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

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This paper presents an overview on selected results in the area of millimeter-wave and submillimeter-wave integrated circuits and devices in Europe for application in the frequency range between 100 GHz and 2 THz Advanced integrated circuits for millimeter-wave applications based on metamorphic InAlAs/InGaAs HEMTs on 4" GaAs substrates were developed and manufactured at the Fraunhofer Institute IAF. An extrinsic transit frequency of 410 GHz for 50 nm gate length devices is achieved. Twostage low-noise amplifiers demonstrate a small signal gain of 20 dB and a noise figure of 2.4 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 21 dB at 220 GHz. These results are compatible with those achieved using state-of-the-art InP-based HEMT technologies.Recent results of HBVs (Heterojunction Barrier Varactors), Schottky diodes and HEBs (Hot-Electron Bolometers) for signal generation and detection up to terahertz frequencies obtained by various research groups in Europe are presented.

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Section: Millimeter-wave Integratedmentioning

confidence: 99%

From 100 GHz to Terahertz Electronics - Activities in Europe

Schlechtweg

Tessmann

2006

2006 IEEE Compound Semiconductor Integrated Circuit Symposium

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“…Based on a log-normal distribution, an activation energy of 1.6 eV and a median life time of 2 10 6 hours at a channel temperature of 125 °C were calculated. More details on our metamorphic HEMT technology can be found in [4].…”

Section: Technologymentioning

confidence: 99%

A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

Schworer

Roca²,

Leuther³

et al. 2005

European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005

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-A coplanar millimeter wave doubler MMIC covering the entire G-band was developed. Based on a 50 nm metamorphic HEMT technology, the circuit demonstrates an output power of more than -12 dBm between 150-and 220 GHz for an input power of 0 dBm. By increasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180-and 220 GHz. Good fundamental rejection was ensured by using a Marchand Balun for balancing the design. The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.

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“…Superior microwave and millimeter wave performance of InGaAs/InAlAs/InP high electron mobility transistor (HEMT) microwave monolithic integrated circuits (MMICs) has been demonstrated for space and military applications over the frequency ranges 44 GHz [1][2], 94 GHz [3][4][5], 118 GHz [6][7], 155 GHz [8][9], 183-220 GHz [8,[10][11][12], and beyond 250 GHz [13][14][15]. To ensure the reliability of InAlAs/InGaAs/InP HEMT MMICs during their lifetime operation, it is important to demonstrate the high reliability performance of InAlAs/InGaAs/InP HEMT MMICs subjected to elevated temperature lifetest.…”

Section: Introductionmentioning

confidence: 99%

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

Chou

Leung

Biedenbender

et al. 2010

2010 IEEE International Reliability Physics Symposium

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Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature lifetesting. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at T ambient of 280 °C projects the median-time-to-failure exceeding 1x10 6 hours at T channel of 125 °C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.

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70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers

Cited by 40 publications

References 6 publications

From 100 GHz to Terahertz Electronics - Activities in Europe

From 100 GHz to Terahertz Electronics - Activities in Europe

A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

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