Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement

Tasker, P.J.; Reinert, W.; Braunstein, J.; Schlechtweg, M.

doi:10.1109/euma.1992.335733

Cited by 27 publications

(15 citation statements)

References 14 publications

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“…Experimental results agree well with the expressions, and the model together with its implications have later been studied in many papers by other authors, e.g. Tasker et al (2) and Hughes (3). A disadvantage is that the relatively simple expressions for the model can be obtained only by omitting some significant components from the equivalent circuit.…”

Section: Introductioqsupporting

confidence: 54%

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

Mallat

1994

24th European Microwave Conference, 1994

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A new approach to noise paraneter formulation is presented and applied to a HEMT equivalent circuit. The approach focuses in representing the noise parameters of the device as a combined result of considering intrinsic noise sources one by one. This provides insight into the contribution of each intrinsic floise source and expressions for relating their effect to the dominating components of the equivalent circuit. The approach suits best for use with the resistor temperaiture noise model. The effect of the main parasitic components as well as the need to differenatiate between the sources in the modelling of an0y experimenial HEMT device can bevaluated.- INTRODUCTIOQ

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Section: Introductioqsupporting

confidence: 54%

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

Mallat

1994

24th European Microwave Conference, 1994

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“…In that case, only two frequency-independent noise constants (gate temperature and drain temperature ) have to be determined. Moreover, other authors [12], [15] assume that equals the physical temperature, in which case only one parameter must be determined to extract the four noise parameters. This can be done from the measurement of the transistor noise figure, with a matched (50 ) source reflection coefficient , as proposed by Tasker et al [12], thus, a tuner is not required.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, other authors [12], [15] assume that equals the physical temperature, in which case only one parameter must be determined to extract the four noise parameters. This can be done from the measurement of the transistor noise figure, with a matched (50 ) source reflection coefficient , as proposed by Tasker et al [12], thus, a tuner is not required. Alternatively, Dambrine et al [9] use the current-current intrinsic noise-source configuration (also called admittance or , , model) with a number of simplifying assumptions (in particular, the correlation coefficient is assumed to be purely imaginary and related to parameters , by the approximate expression , to determine the four noise parameters from the measurement of as a function of frequency.…”

Section: Introductionmentioning

confidence: 99%

FET noise-parameter determination using a novel technique based on 50-Ω noise-figure measurements

Lázaro

Pradell

O'Callaghan

1999

IEEE Trans. Microwave Theory Techn.

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A novel method for measuring the four noise parameters of a field-effect transistor (FET) is presented. It is based on the determination of its intrinsic noise matrix elements [C INT 11 , C INT 22 , Re(C INT 12), Im(C INT 12)] by fitting the measured device noise figure for a matched source reflection coefficient (F50) at a number of frequency points, thus, a tuner is not required. In contrast to previous works, no restrictive assumptions are made on the intrinsic noise sources. The receiver full-noise calibration is easily performed by using a set of coaxial and on-wafer standards that are commonly available in a microwave laboratory, thus, an expensive broad-band tuner is not required for calibration either. On-wafer experimental verification up to 26 GHz is presented and a comparison with other F 50-based and tunerbased methods is given. As an application, the dependence of the FET intrinsic noise sources as a function of the bias drain-current and gate-length is obtained.

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“…50 Q) would be more desirable. So far, there are several approaches available ( [4], [5], [6], [7]) which use different simplifications. But the approximations reduce accuracy.…”

Section: Introductionmentioning

confidence: 99%

New Algorithm for Extraction of FET Noise Model Parameters

Rudolph

Doerner

Klapproth

et al. 1998

1998 28th European Microwave Conference

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A new algorithm for extraction of both noise temperatures of the POSPIESZALSKI model is presented. For the first time, they are determined directly from the frequency dependence of the noise factor at a single source impedance (e.g. SO Q), without any simplification of the model. This reduces noise measurement efforts considerably. The extraction algorithm is based on linear least-square estimation, and thus yields a unique solution without iteration. Another advantage of the new algorithm is that only the values of the extrinsic elements and the intrinsic resistances RgJS and Rd, are to be known a priori.

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Direct Extraction of All Four Transistor Noise Parameters from a Single Noise Figure Measurement

Cited by 27 publications

References 14 publications

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

FET noise-parameter determination using a novel technique based on 50-Ω noise-figure measurements

New Algorithm for Extraction of FET Noise Model Parameters

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