Transistor performance and electron transport properties of high performance InAs quantum-well FET's

Abstract

A novel field-effect transistor based on a pseudomorphic InAs quantum well in a doped InGaAdInAlAs double hetemstructure is reported. Low-field mobility, electron peak velocity, and transistor performance are studied as functions of InAs quantum well thickness, where the InAs layer is in the center of a 3OO-W uniformly doped InGaAs/lnAlAs quantum well lattice matched to InP. Electron transport-both at low and high fields-along with transistor transconductance are optimal for structures with a 30-i% InAs quantum well. 'hansistors based on the InAs quantum well structures with 0.5-pm gate lengths yielded mom temperature extrinsic transconductances of 708 mS/mm, more than a 100% increase over those with no I d s .

Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases

“…The InAs-based heterostructures may further improve their performance. 23 For understanding why the 2DEGs were not scattered by the misfit dislocations, which must have been generated in the strain relaxation, we have employed scanning TEM. The lamella with a size of 6 μm × 0.3 μm for the observation was prepared using the focused ion beam etching.…”

Strain-compensated AlAs/(In,Ga)As heterostructures for short-wavelength intersubband absorption and laser emission

“…Furthermore, the local strain within one period also cannot be so high that either non-planar growth occurs (self organized structures through either the Stranski-Krastanow or the Volmer-Weber mechanisms) or that the film becomes dislocated. At low substrate temperatures, both AlAs and InAs can be grown in thin films maintaining two-dimensional growth [8]; the thickness of these films is limited to about 3 nm. In a superlattice of In y Al 1Ày As=In x Ga 1Àx As the values of y and x will, of course, determine the ratio of the thicknesses of barrier and well to compensate the strain within each period.…”

Improvement of Carrier Mobility in Quantum Wells by the Surface Smoothing of Strain-Relaxed Buffer Layers

“…The InAs QW structures were examined for the application as transistors because of the large electron mobility realized by the small effective mass . Recently, the strong spin-orbit coupling of InAs has attracted attention for utilizing two-dimensional electron gases (2DEGs) for spintronics applications. − In growing the QW structures, the electron accumulation at the surface of bulk InAs makes it necessary to employ other materials as nonconductive substrates, at least, for electrical devices. − Here, the layers typically relax during the heteroepitaxy mentioned above as a consequence of the relatively large lattice mismatch .…”