Transistorized Simultaneous Industrial Color Television

Nakano, Masahiro; Shimura, Tatsuya; Osawa, Koji

doi:10.3169/itej1954.18.92

Cited by 1 publication

(2 citation statements)

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“…Nakano established a self-consistent model of narrow-gap RIE with a capacitively coupled plasma reactor for SF 6 plasma. [185][186][187] Using the discharge structure obtained from the relaxation continuum model, simulated plasma conditions such as molecular densities, which depend on plasma exposure time and gas pressure, were simulated, as shown in Fig. 12.…”

Section: Early Development Of Feature Simulation Techniquesmentioning

confidence: 99%

“…Using the discharge structure obtained from the relaxation continuum model, plasma conditions were simulated. 185) addition, massively parallel calculation using next-generation super computers, such as quantum computers, could decrease calculation cost and enable full 3D calculation within a realistic time frame to provide feedback for process development. 4.5.2.…”

Section: Sophisticated Modeling Of Surface Reactionsmentioning

confidence: 99%

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Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development

Iwase

Kamaji

Kang

et al. 2019

Jpn. J. Appl. Phys.

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Semiconductor device production has grown year on year, with high-volume manufacturing supported by advances in plasma processes. In plasma-based processing, ions and reactive species synergistically enhance chemical reactions, whose kinetics is in a nonequilibrium state in the region of the surface subjected to ion bombardment. To control such processing, methods for process monitoring, equipment control, modeling and simulation, and controlling plasma-induced damage, are required. Here, we conduct a systematic review of the literature over the last 40 years to evaluate the history and progress of dry processes in regard to intelligent process-control. We also address the challenges of implementing “virtual product development” utilizing information technology.

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Section: Early Development Of Feature Simulation Techniquesmentioning

confidence: 99%

Section: Sophisticated Modeling Of Surface Reactionsmentioning

confidence: 99%