A quantum cascade laser based on a strain-compensated Ga 0.4 In 0.6 As/Al 0.58 In 0.42 As heteropair is developed, which operates in a pulse mode in the wavelength range of 5.5-5.6 µm at a temperature of up to 350 K. Such characteristics are obtained due to increased quantum well depth and a two-phonon depopulation mechanism for the lower laser level. The laser epitaxial heterostructure was grown by the MOVPE method. Investigation by the high-resolution X-ray diffraction technique confirmed a high quality of the heterostructure. The threshold current density is 1.6 kA/cm 2 at 300 К. The characteristic temperature is T 0 = 161 K for the temperature range of 200-350 K. For a laser of size 20 µm × 3 mm with cleaved mirrors, the maximum pulse power is 1.1 W at 80 K and 130 mW at 300 K.Keywords: quantum cascade laser, GaInAs/AlInAs heteropair, MOVPE, the middle IR spectrum
IntroductionQuantum cascade laser (QCL) is a unipolar radiation source based on intersubband transitions of charge carriers in a semiconductor nanoheterostructure [1,2]. The radiation wavelength of QCL is determined by both quantum well size and the heteropair employed, which determines the band offset that is the quantum well depth. Presently, by varying these two parameters and the material composition, QCLs are created, which cover a wide spectral range of 3-250 µm. For operation in the actual middle IR spectral range of 4-6 µm, a strain-compensated GaInAs/AlInAs heteropair is used and the multilayer nanoheterostructure is grown, as a rule, by the molecular beam epitaxy method. The MOVPE (metal organic vapor phase epitaxy) epitaxial method suggested How to cite this article: I. I