Transmission electron microscopy studies of atomic layer deposition TiO2 films grown on silicon

Characterization of low temperature deposited atomic layer deposition TiO2 for MEMS applications

“…Same tendency of the surface morphology change was reported by others. [15][16][17] The effect of nucleus density at the lower temperature is more pronounced than that of grain coalescence, thus causes the larger grain size. 17 On the other hand, much denser nuclei are formed at higher temperatures, which results in smaller grains.…”

Piezoelectric Thin Film Deposition: Novel Self-Assembled Island Structures and Low Temperature Processes on Silicon

“…Crystallisation of the PSZT occurs once a certain thickness of material (~25 nm) has been deposited. Growth stress may contribute to the onset of crystallisation (Mitchell et al, 2003). X-ray diffraction analysis of these films showed that the films exhibited preferential [104] orientation (discussed later).…”

“…At the growing surface, those grains in orientations promoting faster growth can dominate neighbouring grains and eventually isolate them. With continued growth, grains may then develop prismatic faceting which causes increased surface roughening as the grain width increases (Mitchell et al, 2003). The eutectic point of gold and silicon is 363 ºC, but at the deposition temperature of 300 ºC interdiffusion of gold and silicon (enabled by outward silicon diffusion through gold grain boundaries) through the 15 nm thin titanium adhesion layer has been observed.…”

Characterisation of epitaxial TiO2 thin films grown on MgO(001) using atomic layer deposition

“…The influence of the substrate on TiO 2 film growth has been investigated on substrates including Si (both native oxide covered and hydride terminated) [9], KBr [10] and soda-lime glass [11]. In all instances, at temperatures of around 300 1C, anatase was formed with no preferred orientation.…”