Transparent Active Matrix Organic Light-Emitting Diode Displays Driven by Nanowire Transistor Circuitry

Ju, Sanghyun; Li, Jianfeng; Li, Jun; Chen, Po Chiang; Ha, Yushin; Ishikawa, Fumiaki; Chang, Hsiao-Kang; Zhou, Chongwu; Facchetti, Antonio; Janes, David B.; Marks, Tobin J.

doi:10.1021/nl072538+

Cited by 220 publications

(154 citation statements)

References 29 publications

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“…[1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme.…”

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confidence: 99%

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Wang

Song

Zhang

et al. 2017

Adv Elect Materials

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on. [1][2][3][4][5][6][7] Among these 1D nanomaterials, many novel synthesis techniques have then been developed, including chemical vapor deposition (CVD), [8][9][10] hydrothermal methods, [11][12][13] and template-assisted electrodeposition, etc; [14][15][16] however, all of these fabrication schemes come with different process-related disadvantages. For example, CVD has been widely employed for the growth of 1D semiconductor nanostructures, [17,18] in which this technique is still far from being compatible with the large-scale manufacturing platform due to the rather high fabricating cost, rigorous process control, low production throughput, and complicated subsequent device fabrication scheme. [9,19] Although hydrothermal methods are seem to be the simple process and capable to produce large amounts of 1D nanomaterials with the relatively low cost, they are challenging to precisely control the diameter, morphology, and crystal structure of the nanomaterials obtained, seriously influencing their chemical and physical properties, eventually limiting their practical utilizations. [13,20] In general, electrospinning is well accepted to its simplicity and versatility to yield organic, inorganic or composite nanofibers (NFs). [21,22] This technique can not only fabricate NFs with well-controlled properties, such as the excellent crystallinity, homogeneous chemical composition, and uniform diameters but also deliver the high throughput Although significant progress has been made towards using ZnO nanofibers (NFs) in future high-performance and low-cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple onestep electrospinning process (i.e., without hot-press) is presented to obtain controllable ZnO NF networks to achieve high-performance, large-scale, and low-operating-power thin-film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 °C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (V th ) of ≈0.9 V, a low leakage current of ≈10 −12 A, and a superior on/off current ratio of ≈10 6 , corresponding to one of the best-performed ZnO NF devices reported to date. When high-κ AlO x thin films are employed as gate dielectrics, the source/drain voltage (V DS ) can be substantially reduced by 10× to a range of only 0-3 V, along with a 10× improvement in mobility to a respectable value of 0.2 cm 2 V −1 s −1 . These results indicate the potential of these nanofibers for use in next-generation low-power devices. Thin-Film Transistors

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ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Wang

Song

Zhang

et al. 2017

Adv Elect Materials

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“…Transparent devices have been fabricated for various applications, including transistors (1-6), optical circuits (7), displays (8)(9)(10), touch screens (11), and solar cells (12)(13)(14). However, the battery, a key component in portable electronics, has not been demonstrated as a transparent device.…”

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Transparent lithium-ion batteries

Yang¹,

Jeong

Hu³

et al. 2011

Proc. Natl. Acad. Sci. U.S.A.

246

212

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Transparent devices have recently attracted substantial attention. Various applications have been demonstrated, including displays, touch screens, and solar cells; however, transparent batteries, a key component in fully integrated transparent devices, have not yet been reported. As battery electrode materials are not transparent and have to be thick enough to store energy, the traditional approach of using thin films for transparent devices is not suitable. Here we demonstrate a grid-structured electrode to solve this dilemma, which is fabricated by a microfluidics-assisted method. The feature dimension in the electrode is below the resolution limit of human eyes, and, thus, the electrode appears transparent. Moreover, by aligning multiple electrodes together, the amount of energy stored increases readily without sacrificing the transparency. This results in a battery with energy density of 10 Wh∕L at a transparency of 60%. The device is also flexible, further broadening their potential applications. The transparent device configuration also allows in situ Raman study of fundamental electrochemical reactions in batteries.energy storage | flexible electronics | self-assembly | transparent electronics T ransparent electronics is an emerging and promising technology for the next generation of optoelectronic devices. Transparent devices have been fabricated for various applications, including transistors (1-6), optical circuits (7), displays (8-10), touch screens (11), and solar cells (12)(13)(14). However, the battery, a key component in portable electronics, has not been demonstrated as a transparent device. Consequently, fully integrated and transparent devices cannot be realized because the battery occupies a considerable footprint area and volume in these devices (e.g., cell phones and tablet computers). Typically, a battery is composed of electrode materials, current collectors, electrolyte, separators, and packaging (15). None of them are transparent except for the electrolyte. Furthermore, as these components are in series, all of them must be clear to make the whole device transparent. A widely used method for making transparent devices is to reduce the thickness of active materials down to much less than their optical absorption length, as demonstrated in carbon nanotubes (5, 7), graphene (11), and organic semiconductors (12,14). However, this approach is not suitable for batteries, because, to our knowledge, no battery material has an absorption length long enough in the full voltage window. For example, LiCoO 2 and graphite, the most common cathode and anode in Li-ion batteries, are good absorbers even with a thickness less than 1 μm. Moreover, black conductive carbon additive is always required in electrodes, which occupies at least 10% of the total volume (16). In contrast, to power common portable electronics, the total thickness of electrode material needs to be on the order of 100 μm-1 mm, much longer than the absorption length of electrode materials. This dilemma comes from the fact that the trans...

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“…To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21)(22)(23)(24)(25)(26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts.…”

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confidence: 99%

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

Fan

Jacobson

et al. 2008

Proc. Natl. Acad. Sci. U.S.A.

241

235

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We report large-scale integration of nanowires for heterogeneous, multifunctional circuitry that utilizes both the sensory and electronic functionalities of single crystalline nanomaterials. Highly ordered and parallel arrays of optically active CdSe nanowires and high-mobility Ge/Si nanowires are deterministically positioned on substrates, and configured as photodiodes and transistors, respectively. The nanowire sensors and electronic devices are then interfaced to enable an all-nanowire circuitry with on-chip integration, capable of detecting and amplifying an optical signal with high sensitivity and precision. Notably, the process is highly reproducible and scalable with a yield of Ϸ80% functional circuits, therefore, enabling the fabrication of large arrays (i.e., 13 ؋ 20) of nanowire photosensor circuitry with image-sensing functionality. The ability to interface nanowire sensors with integrated electronics on large scales and with high uniformity presents an important advance toward the integration of nanomaterials for sensor applications.nanomaterials ͉ printable electronics ͉ devices ͉ transistors ͉ imager C hemically derived, synthetic nanomaterials with low dimensionality and well defined atomic composition present a unique route toward miniaturization of electronic and sensor components while enhancing their performance and functionality (1-5). To date, a broad spectrum of single crystalline nanomaterials with tailored properties have been synthesized, and have been successfully demonstrated as the building blocks of various high-performance device elements, such as transistors (6 -17), optical devices (18 -20), sensors (21-26), energyscavenging devices (27), and simple circuit structures (7,17,19,28). These synthetic materials present a number of key advantages over their bulk counterparts. For instance, downscaling of the active sensing material to the nanoscale regime has been shown to enhance the sensitivity of chemical, biological, and optical sensors by orders of magnitude (21-26). To enable the implementation of nanosensors for various technological applications, on-chip integration with electronics is needed to enable automated and accurate processing of the signal. Here, we demonstrate an all-integrated, heterogeneous nanowire (NW) circuitry, capable of detecting and amplifying an optical signal with high sensitivity and responsivity. By implementing our recently developed contact printing technology (29, 30), large arrays of optically active CdSe NWs and high-mobility core/shell Ge/Si NWs are assembled at well defined locations on substrates, and configured as integrated sensor and electronic active components of an all-nanowire circuitry with image-sensing capability. Results and DiscussionIn this work, direct band gap CdSe NWs were used as a model system for the optical sensor elements, capable of detecting visible light with high sensitivity. CdSe-and CdS-based nanomaterials such as quantum dots and NWs have been extensively explored in the past, and their superb optical and opto-electric...

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Transparent Active Matrix Organic Light-Emitting Diode Displays Driven by Nanowire Transistor Circuitry

Cited by 220 publications

References 29 publications

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

ZnO Nanofiber Thin‐Film Transistors with Low‐Operating Voltages

Transparent lithium-ion batteries

Large-scale, heterogeneous integration of nanowire arrays for image sensor circuitry

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