Transparent and flexible nonvolatile memory using poly(methylsilsesquioxane) dielectric embedded with cadmium selenide quantum dots

Abstract

In this work, a transparent and flexible nonvolatile memory was fabricated using a solution process. The conduction mechanisms of the metal/ insulator/metal structure consisting of cadmium selenide quantum dots embedded in poly(methylsilsesquioxane) dielectric layers were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and stable up to 1 ' 10 4 s with little deterioration and a distinct ON/OFF ratio of 10 4 . Endurance cycle and retention tests of the as-fabricated memory device were also carried out. The results indicate that the device has good operating stability.

Solution-Processed, Flexible, and Transparent Non-Volatile Memory With Embedded Graphene Quantum Dots in Polymethylsilsesquioxane Layers

“…The preparation details of GQDs and PMSSQ solution has been described in our previous work [6], [7]. Two MIM NVM devices with structure (a)Ag NWs/PMSSQ/indium-tin-oxide (ITO)/polyethylene terephthalate (PET) and (b)Ag NWs/PMSSQ/GQDs/PMSSQ/ITO/PET were schematically shown in Fig.…”

“…Because the properties of polymer memory devices primarily depend on the charge trap material, a significant amount of studies to explore appropriate materials applicable to polymer memory devices has been conducted [2], [3]. Recently, metal-insulator-metal (MIM) devices with embedded semiconductor or metallic nanoparticles (NPs) such as CdSe/ZnS NPs [4], Au NPs [5], CdSe NPs [6], were proven to exhibit memory effect. Graphene quantum dots (GQDs) are used as charge trap medium in this study owing to their excellent properties, such as superiority in chemical inertness, low toxicity [7], [8], higher work function than other reported nanoparticles.…”

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

“…6) Among them, ReRAM is considered as one of the most suitable memories for next-generation applications because of its low power consumption, favorable scalability, excellent retention, simple structure, and high operation speed. [7][8][9][10] Numerous materials have been developed for use as the resistive layer in ReRAM. [11][12][13] Among them, polymer materials are strong resistive layer candidates owing to their thermal stability, chemical resistance, mechanical strength, flexibility, and simple production process.…”

Improving high-resistance state uniformity and leakage current for polyimide-based resistive switching memory by rubbing post-treatment

“…Among such NVMs, the organic resistive random access memory (ReRAM) has been attracting much attention and is considered as one of the most promising candidates because of its numerous advantages, such as easy process capability, flexibility, low cost, and versatile functionality. [4][5][6][7] For the ReRAM design, low-power consumption, an appropriate set=reset electric field margin, and high thermal stability are the main considerations in satisfying the practical application requirements. Among numerous polymer types, polyimide (PI) is considered one of the most suitable materials because of its distinct thermal stability, chemical resistance, and mechanical strength.…”