Transparent conducting indium doped ZnO films by dc reactive S-gun magnetron sputtering

Abstract

Transparent conducting ZnO films have been prepared by modified S-gun reactive dc magnetron sputtering using an indium doped Zn target. Films with a resistivity of 1.08 x 10(-3) Omega cm and average transmittance of over 80% in the visible region were obtained. The influence of indium content at the surface of Zn target on the resistivity and transmittance of ZnO films was investigated. Optical properties of ZnO films in the 0.2-2.5-microm range were modeled by the Drude theory of free electrons. The reflectance of ZnO films in the 2.5-26.0-microm region was calculated.

Structure and optical properties of ZnO:V thin films with different doping concentrations

“…ZnO thin films can be deposited by several physical and chemical deposition techniques, such as laser-molecular-beam-epitaxy [8], chemical vapor deposition [9], pulsed laser deposition [10] and sputtering [11]. Among these depositing techniques, sputtering technique presents some important advantages and improved technological possibilities [12][13][14].…”

Structural, electrical, and optical properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

“…There have been many reports of ZnO:Ga films prepared by magnetron sputtering [7,8], spray prolysis [9], MOCVD [10], pulsed laser deposition [11], arc plasma evaporation [12], sol-gel [13], ion plating [14], among others. Among the deposition techniques, DC reactive magnetron sputtering technique has some advantages in comparison to the other methods [15,16]. This technique is quite simple and the required setup is less expensive, and is considered to be the most favorable deposition method to obtain highly uniform films with high packing density and strong adhesion at a high deposition rate.…”

Study of ZnO and Ni-doped ZnO synthesized by atom beam sputtering technique

“…It is also mentioned that doped ZnO can be prepared as a less expensive TCO material [7]. Important results of the above mentioned studies are: (i) Al-doped ZnO having transmittance ∼ 88% and resistivity approximately 8.5 × 10 −5 Ω cm [5]; (ii) nanocrystalline ZnO:Ga films having resistivity 7 × 10 −4 Ω cm and average transparency ∼ 93% [3]; (iii) synthesis of a p-type ZnO [4].…”