Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

Hussein, H.M.A.; Ali, H.M.; Mohamed, S.; El-Raheem, M. M. Abd

doi:10.1051/epjap:2006039

Cited by 22 publications

(22 citation statements)

References 24 publications

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“…Figure 4 displays the refractive index spectra for the Sb-ZnO films suggesting normal dispersion behavior. Furthermore, n decreases with raising the annealing temperature according to increasing the transparency of the films with increasing annealing temperature (Mohamed et al, 2006), which is affirmed by our results. The dielectric function ε is characterized as , the real part ε 1 = n 2k 2 , the imaginary part ε 2 = 2nk is of the dielectric constant representing the dispersion and absorption respectively.…”

Section: Resultssupporting

confidence: 87%

Effect of annealing temperature on the optical properties of Sb-ZnO thin films prepared using co-sputtering technique

Alkhammash¹

2018

Int. J. Phys. Sci.

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Transparent conducting oxide thin films of Sb-ZnO were prepared on optically flat quartz by radiofrequency (RF) sputtering method. The scan electron microscope was used to characterize the topological morphology of the surface of the as-prepared and annealed films at (300, 400, 470, and 525°C) for 4 h in air. The optical properties of the films were deliberated using their reflectance and transmittance spectra at normal incident light. The optical energy band gap energy (Eop ) values were found to increase by elevating the annealing temperatures. The dispersion curves of the refractive index of Sb-ZnOthin films were found to follow the single oscillator model. Optical parameters such as refractive index, real and imaginary parts of the dielectric constant, and optical conductivity were investigated.

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Section: Resultssupporting

confidence: 87%

Effect of annealing temperature on the optical properties of Sb-ZnO thin films prepared using co-sputtering technique

Alkhammash¹

2018

Int. J. Phys. Sci.

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“…The low transmittance of as-deposited films is due to the lack of oxygen resulting from deposition by electron beam evaporation. This result was noted in our previous works [10,[17][18][19] and agrees with that in ref. [23].…”

Section: Effect Of Cdo Buffer Layer Thicknesssupporting

confidence: 94%

“…In our previous studies on pure and doped-CdO films deposited by e-beam [17][18][19], it was noted that these films have a high optical transmittance (>80%) in the visible region and a polycrystalline structure. Moreover, Xiu et al [20] studied CdO as a buffer layer to improve the structural properties of ZnO films.…”

Section: Introductionmentioning

confidence: 99%

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Hussein

Ali

2008

Science and Technology of Advanced Materials

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A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1 × 10 −3 cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450• C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45 × 10 −4 cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

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“…When the films are annealed under ambient air at temperature higher than 350 C, oxygen is chemisorbed on the film surface and in pores, acting as an acceptor by accepting an electron from occupied conduction band states. 24) Furthermore, the adsorbed oxygen removes tin interstitials and/or oxygen vacancies, thus reduces the density of donors like defects and carrier concentration, 25,26) leading to an increase in the electrical resistivity. Figure 12 shows the annealing temperature dependence of carrier mobility.…”

Section: Effect Of Annealing Temperature Onmentioning

confidence: 99%

Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

Ali

Hussein

Wakkad

et al. 2009

jjap

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Tin-doped cadmium oxide films were deposited by electron beam evaporation technique. The structural, optical and electrical properties of the films were characterized. The X-ray diffraction (XRD) study reveals that the films are polycrystalline in nature. As composition and structure change due to the dopant ratio and annealing temperature, the carrier concentration was varied around 10 20 cm À3 , and the mobility increased from less than 10 to 45 cm 2 V À1 s À1. A transmittance value of $83% and a resistivity value of 4:4 Â 10 À4 cm were achieved for (CdO) 0:88 (SnO 2) 0:12 film annealed at 350 C for 15 min., whereas the maximum value of transmittance $93% and a resistivity value of 2:4 Â 10 À3 cm were obtained at 350 C for 30 min. The films exhibited direct band-to-band transitions, which corresponded to optical band gaps of 3.1-3.3 eV.

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Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

Cited by 22 publications

References 24 publications

Effect of annealing temperature on the optical properties of Sb-ZnO thin films prepared using co-sputtering technique

Effect of annealing temperature on the optical properties of Sb-ZnO thin films prepared using co-sputtering technique

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Optical and Electrical Properties of Tin-Doped Cadmium Oxide Films Prepared by Electron Beam Technique

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