Transparent <i>p</i>-Type Conducting Oxides: Design and Fabrication of <i>p-n</i> Heterojunctions

Kawazoe, Hiroshi; Yanagi, Hiroshi; Ueda, Kazushige; Hosono, Hideo

doi:10.1557/mrs2000.148

Cited by 494 publications

(343 citation statements)

References 18 publications

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“…12 When used as a p-type material, the simple binary composition of Cu 2 O gives it a processing advantage over the more complicated ternary oxides (e.g. CuAlO 2 ), particularly because it can be grown by low-temperature atmospheric deposition methods.…”

confidence: 99%

Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

Muñoz‐Rojas¹,

Jordan²,

Yeoh³

et al. 2012

AIP Advances

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Phase pure, dense Cu2O thin films were grown on glass and polymer substrates at 225°C by rapid atmospheric atomic layer deposition (AALD). Carrier mobilities of 5 cm2V−1s−1 and carrier concentrations of ∼1016 cm−3 were achieved in films of thickness 50 - 120 nm, over a >10 cm2 area. Growth rates were ∼1 nm·min−1 which is two orders of magnitude faster than conventional ALD.. The high mobilities achieved using the atmospheric, low temperature method represent a significant advance for flextronics and flexible solar cells which require growth on plastic substrates

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confidence: 99%

Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

Muñoz‐Rojas¹,

Jordan²,

Yeoh³

et al. 2012

AIP Advances

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“…Hamberg and Granqvist discussed the optical properties of ITO films fabricated by the reactive electron-gun evaporation onto heated glass substrates [42]. The development up to 2000 on the various aspects of utilizing TCOs was summarized in reports considering, for example, characterizations [48], applications and processing [43], criteria for choosing transparent conductors [47], new n-and p-type TCOs [44,45], and the chemical and thin-film strategies for new TCOs [46]. The recent progresses in new TCO materials and TCOs based devices were discussed in [49] and [50].…”

Section: Introductionmentioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

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Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

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“…Up to now, only some reports exist in the literature on thin oxide films with p-type electrical conduction. There are mainly materials based on Cu [5,6]. While most of n-type TOS are transparent in the visible range of light spectrum, p-type doping with different metal ions usually results in light absorption and the films become opaque.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

et al. 2011

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Abstract:Electrical and optical properties of TiO 2 :Pd thin films deposited from Ti-Pd mosaic targets sputtered in reactive oxygen plasma have been studied. The properties were investigated for thin films with the Pd amount of 5.5 at. %, 8.4 at. % and 23 at. %. Based on resistivity measurements a drop from 10 3 down to almost 10 −3 Ωcm has been recorded when the Pd amount was varied from 5.5 at. % to 23 at. %, respectively. Moreover, it was shown that doping with different amounts of Pd results in the possibility of obtaining both types of electrical conduction: n-type for the TiO 2 with 5.5 at. % and 8.4 at. % of Pd and ptype for the TiO 2 with 23 at. % of Pd thin films. From optical measurements it has been found that as the Pd amount was increased the transmission through the thin films was reduced and position of the fundamental absorption edge was shifted toward a longer wavelength range of up to 600 nm. The optical band gap was calculated for direct and indirect transitions from optical absorption spectra. Structural properties were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD patterns displayed occurrence of the crystalline, TiO 2 -rutile for lower Pd amounts (5.5 at. %, 8.4 at. %), while the TiO 2 :Pd (23 at. %) thin films displayed XRD-amorphous behaviour. Images obtained from AFM displayed dense, nanocrystalline structure with homogenous distribution of crystallites. Additionally performed secondary ion mass spectroscopy investigation confirmed homogenous distribution of Pd in the whole thickness of the prepared thin films. PACS

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Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions

Cited by 494 publications

References 18 publications

Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

Growth of ∼5 cm2V−1s−1 mobility, p-type Copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Optical and electrical properties of nanocrystalline TiO2:Pd semiconducting oxides

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