Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on Flexible Polymer Substrates

Kaczmarski, Jakub; Taube, Andrzej; Borysiewicz, M.; Myśliwiec, Marcin; Piskorski, K.; Stiller, Krystyna Marta; Kamińska, E.

doi:10.1109/ted.2017.2658939

Cited by 16 publications

(12 citation statements)

References 31 publications

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“…To date, flexible oxide semiconductor thin-film transistors, one of the essential elements for flexible circuits, have been extensively studied and even started to be commercialized as the backplane driver of displays [7], [8]. Flexible diodes based on oxide semiconductors [9]- [16], on the Manuscript received Mar. 29,2018.…”

Section: Introductionmentioning

confidence: 99%

“…Annealing may also introduce stress and interface trap states at the heterojunctions and thus result in degradation of the device performance [23], [24]. Another method to avoid oxygen vacancies at the Schottky interface is by deposition of oxide layers [16], [25], [26] or applying oxidation treatment on the Schottky anode [22], [24]. Introducing sputtered oxide layers such as Ru-Si-O [16], AgOx [25] or PtOx [26], at IGZO Schottky interface have successfully achieved large Schottky barrier heights (ΦB) of 0.90 ~ 1.00 eV.…”

Section: Introductionmentioning

confidence: 99%

“…Another method to avoid oxygen vacancies at the Schottky interface is by deposition of oxide layers [16], [25], [26] or applying oxidation treatment on the Schottky anode [22], [24]. Introducing sputtered oxide layers such as Ru-Si-O [16], AgOx [25] or PtOx [26], at IGZO Schottky interface have successfully achieved large Schottky barrier heights (ΦB) of 0.90 ~ 1.00 eV. However, it leads to relatively large ideality factors (n) of 1.32~1.97, probably due to the interface defects induced by ion bombardment during the sputtering deposition.…”

Section: Introductionmentioning

confidence: 99%

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High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO

Zhang

Liu

et al. 2018

IEEE Trans. Electron Devices

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High-performance flexible InGaZnO (IGZO)-basedSchottky diodes are fabricated on polyethylene-terephthalate (PET) and polyimide (PI) substrates at room temperature without any thermal treatment. The diode performance improves significantly by either oxygen plasma or UV-ozone treatment on Pd anode. X-ray photoelectron spectroscopy indicates that the both treatments lead to Pd surface oxidation. The oxygen plasma treatment results in more complete oxidation, and thus ensures better oxygen stoichiometry at the Schottky interface and a higher anode work function. This leads to high performance with on/off ratios of 7.3 × 10 6 and 2.6 × 10 4 , barrier heights of 0.79 and 0.76 eV, and ideality factors of 1.22 and 1.19 on PET and PI, respectively. Interestingly, these flexible diodes show improved performance after storing in ambient air for two years, and fittings on the reverse currents indicate an improved barrier uniformity. The flexible diode on PET after a two-year storage achieves a high on/off ratio of 2.0 ×10 7 , a large barrier height of 0.80 eV, a close to unity ideality factor of 1.09, a high breakdown voltage of -7.5 V, and robust performance upon outward or inward bending, which is, to the best of our knowledge, the highest performance in reported flexible diodes to date.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO

Zhang

Liu

et al. 2018

IEEE Trans. Electron Devices

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“…This effect may be universal and consequently may find applications in flexible oxide electronics. 69,70) 3.2.3. Comparisons with sputtered and ALD-grown IGZO MESFETs and mist-CVD-grown MOSFETs.…”

Section: 2mentioning

confidence: 99%

Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications

Dang

Allen

Furuta

et al. 2019

Jpn. J. Appl. Phys.

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This review summarizes progress in the fabrication of Schottky diodes (SDs), metal-semiconductor and metal-oxide-semiconductor FETs on mist-chemical vapor deposition-(CVD)-grown oxide semiconductor thin films for optical displays, high power devices, and gas sensing applications. These devices generally showed high on-currents, high rectification and on-off ratios. Mist-CVD-grown IGZO and ZTO MESFETs displayed an extreme stability against numerous standard stress conditions. Negative bias temperature stress produced a significant and permanent improvement in the performance of amorphous oxide SDs and MESFETs. Sub-kV breakdown voltage and low specific on-resistance of 0.4 mΩ cm 2 were realized in vertical Sn-doped α-Ga 2 O 3 Schottky barrier diodes by Oda et al. [Appl. Phys. Express 9, 021101 (2016)] but severe current collapse was observed in planar Sn-doped α-Ga 2 O 3 MESFETs. Mist CVD has demonstrated its capacity for not only atomic layer-by-layer control but also the growth of active layers in high-performance electronic devices, even though it is a solution-processed atmospheric pressure technique.

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“…Thus, the properties of Schottky contacts strongly depend on the oxygen content at the metal/AOS interface . For these reasons, several approaches, including the oxygen plasma treatment of Pt and Pd surfaces before IGZO deposition, − and the partial oxidization of Ag (Ag x O) and RuSi (RuSiO) electrodes by reactive sputtering, − have been proposed to avoid the formation of surface and interface defects in IGZO. Among these materials, Ag x O is a promising material because the Ag x O/IGZO interface exhibits a large Schottky barrier height in the range of 0.9–1.1 eV. − Recently, our group has reported the mechanism of work function engineering for Ag x O .…”

Section: Introductionmentioning

confidence: 99%

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

Magari

Aman

Koretomo

et al. 2020

ACS Appl. Mater. Interfaces

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High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum process temperature of 150 °C. IGZO:H was prepared by Ar + O2 + H2 sputtering. IGZO:H SDs on a glass substrate exhibited superior electrical properties with a very high rectification ratio of 3.8 × 1010, an extremely large Schottky barrier height of 1.17 eV, and a low ideality factor of 1.07. It was confirmed that the hydrogen incorporated during IGZO:H deposition increased the band gap energy from 3.02 eV (IGZO) to 3.29 eV (IGZO:H). Thus, it was considered that the increase in band gap energy (decrease in electron affinity) of IGZO:H contributed to the increase in the Schottky barrier height of the SDs. Angle-resolved hard X-ray photoelectron spectroscopy analysis revealed that oxygen vacancies in IGZO:H were much fewer than those in IGZO, especially in the region near the film surface. Moreover, it was found that the density of near-conduction band minimum states in IGZO:H was lower than that in IGZO. Therefore, IGZO:H played a key role in improving the Schottky interface quality, namely, the increase of Schottky barrier height, decrease of oxygen vacancies, and reduction of near-conduction band minimum states. Finally, we fabricated a flexible IGZO:H SD on a poly(ethylene naphthalate) substrate, and it exhibited record electrical properties with a rectification ratio of 1.7 × 109, Schottky barrier height of 1.12 eV, and ideality factor of 1.10. To the best of our knowledge, both the IGZO:H SDs formed on glass and poly(ethylene naphthalate) substrates achieved the best performance among the IGZO SDs reported to date. The proposed method successfully demonstrated great potential for future flexible electronic applications.

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Transparent Ru–Si–O/In–Ga–Zn–O MESFETs on Flexible Polymer Substrates

Cited by 16 publications

References 31 publications

High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO

High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO

Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications

Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes

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